Preparation of large area β -SiC film by hot filament assisted with radio frequency plasma CVD

Yanfeng Jiang, Dabing Hao, Qing'an Huang

Research output: Contribution to journalArticlepeer-review

Abstract

A method that combines radio frequency (RF) plasma with hot filament (HF) chemical vapor deposition (CVD) together has been used to grow silicon carbide film with large area on φ76 mm silicon substrate. The experimental instrument here is the modified conventional RF apparatus (13.56 MHz), with CH4 as reaction vapor. The growth of large area β-SiC film has been realized through adjustment of the number of carbon atoms on the surface for nucleation. The samples obtained through the above method have been systematically investigated by atom force microscopy (AFM), X-ray diffraction (XRD). The result has shown that the whole film on substrate exhibits low stress, good adhesivity and high homogeneity.

Original languageEnglish (US)
Pages (from-to)180-183+197
JournalGuti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume25
Issue number2
StatePublished - May 1 2005

Keywords

  • Nucleation
  • Plasma chemical vapor deposition
  • Silicon carbide

Fingerprint Dive into the research topics of 'Preparation of large area β -SiC film by hot filament assisted with radio frequency plasma CVD'. Together they form a unique fingerprint.

Cite this