TY - JOUR
T1 - Preparation of 4H-SiC BSIT and qualitative comparison with Si BSIT
AU - Jiang, Y.
AU - Li, S.
AU - Li, H.
AU - Liu, S.
AU - Ma, Z.
PY - 2000/2
Y1 - 2000/2
N2 - The SiC static induction transistor (SIT) has been demonstrated and has shown an excellent performance in high-power and ultrahigh-frequency fields. Now a bipolar SIT (BSIT), which is made from silicon carbide, is reported on in this work. The process of the 4H-SiC BSIT's fabrication is listed, too. Moreover, the electrical and thermal properties of the 4H-SiC BSIT are discussed. To exhibit the 4H-SiC BSIT's superior properties, it is compared with a silicon device and it has been deduced that the most prominent adjustment in structure is the base depth. Some differences in the properties exhibited can be attributed to the adjustment of base depth and they are explained in detail.
AB - The SiC static induction transistor (SIT) has been demonstrated and has shown an excellent performance in high-power and ultrahigh-frequency fields. Now a bipolar SIT (BSIT), which is made from silicon carbide, is reported on in this work. The process of the 4H-SiC BSIT's fabrication is listed, too. Moreover, the electrical and thermal properties of the 4H-SiC BSIT are discussed. To exhibit the 4H-SiC BSIT's superior properties, it is compared with a silicon device and it has been deduced that the most prominent adjustment in structure is the base depth. Some differences in the properties exhibited can be attributed to the adjustment of base depth and they are explained in detail.
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U2 - 10.1088/0268-1242/15/2/306
DO - 10.1088/0268-1242/15/2/306
M3 - Article
AN - SCOPUS:0033909056
SN - 0268-1242
VL - 15
SP - 117
EP - 120
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 2
ER -