Preferential interaction paths for localized wave functions in disordered media

Jean Marie Lentali, Svitlana Mayboroda, Marcel Filoche

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN-based alloys are characterized by important spatial composition inhomogeneities resulting from the random distribution of Indium atoms. These variations can induce carrier localization and strongly influence the performance of the devices. We present here a work based on the recent theory of the localization landscape, whose main result is the derivation of an effective potential W. The basins of this effective potential define the localization subregions of carriers. The exponential decay of the wave functions outside these regions is controlled by the Agmons distance, which is calculated on 2D landscape map. Interactions between bound states are shown to happen along very well defined preferential paths within the system.

Original languageEnglish (US)
Title of host publication17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
EditorsMorten Willatzen, Joachim Piprek
PublisherIEEE Computer Society
Pages95-96
Number of pages2
ISBN (Electronic)9781509053230
DOIs
StatePublished - Aug 11 2017
Event17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark
Duration: Jul 24 2017Jul 28 2017

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
ISSN (Print)2158-3234

Other

Other17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017
CountryDenmark
CityCopenhagen
Period7/24/177/28/17

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