Abstract
GaN-based alloys are characterized by important spatial composition inhomogeneities resulting from the random distribution of Indium atoms. These variations can induce carrier localization and strongly influence the performance of the devices. We present here a work based on the recent theory of the localization landscape, whose main result is the derivation of an effective potential W. The basins of this effective potential define the localization subregions of carriers. The exponential decay of the wave functions outside these regions is controlled by the Agmons distance, which is calculated on 2D landscape map. Interactions between bound states are shown to happen along very well defined preferential paths within the system.
Original language | English (US) |
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Title of host publication | 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 |
Editors | Morten Willatzen, Joachim Piprek |
Publisher | IEEE Computer Society |
Pages | 95-96 |
Number of pages | 2 |
ISBN (Electronic) | 9781509053230 |
DOIs | |
State | Published - Aug 11 2017 |
Event | 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 - Copenhagen, Denmark Duration: Jul 24 2017 → Jul 28 2017 |
Publication series
Name | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD |
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ISSN (Print) | 2158-3234 |
Other
Other | 17th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2017 |
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Country/Territory | Denmark |
City | Copenhagen |
Period | 7/24/17 → 7/28/17 |
Bibliographical note
Publisher Copyright:© 2017 IEEE.