The spin dynamics at the interface between the CoFeB and Ta layer has been studied using spin pumping and spin wave characterizations. The spin pumping driven by the ferromagnetic resonance in the CoFeB layer injects a spin current into Ta layer which results in an electromotive force across the Ta layer due to the inverse spin Hall effect. Upon changing the polarity of the bias magnetic field, the polarity of the output voltage inverts and the output voltage increases linearly in respect to the microwave signal power which are consistent with the spin pumping characteristics. The effect of the in-plane magnetization angle on the output voltage has been studied. Furthermore, it is found that the frequency spectrum of the spin Hall voltage is modified by the annealing temperature and the full width at half maximum of the spin pumping increases by more than 40% with the increase of the annealing temperature from 200 °C to 300 °C. The spin Hall angle at the Ta-CoFeB interface is determined to be 0.014, and the damping constant of the CoFeB increases from 0.006 in pure CoFeB to 0.015 in Ta/CoFeB film.