Possible explanation for observed effectiveness of voltage controlled anisotropy

R. Ahmed; R. H. Victora

doi:10.1109/INTMAG.2015.7157501

Possible explanation for observed effectiveness of voltage controlled anisotropy

R. Ahmed
, R. H. Victora

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Spin torque MRAM offers the possibility of ultrahigh density nonvolatile data storage. However, current devices require excessive current densities to switch the magnetization: this greatly limits commercial implementation. Previous researchers [1]-[2] have experimentally demonstrated that the application of approximately 1V across an MgO thin film allows a neighboring ferromagnet to switch with much reduced applied field. It has been argued that this is caused by the voltage adjusting the Fermi level of the ferromagnet in such a way that the magnetic anisotropy is substantially reduced.

Original language	English (US)
Title of host publication	2015 IEEE International Magnetics Conference, INTERMAG 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479973224
DOIs	https://doi.org/10.1109/INTMAG.2015.7157501
State	Published - Jul 14 2015
Event	2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China Duration: May 11 2015 → May 15 2015

Publication series

Name	2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other	2015 IEEE International Magnetics Conference, INTERMAG 2015
Country/Territory	China
City	Beijing
Period	5/11/15 → 5/15/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

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10.1109/INTMAG.2015.7157501

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Possible explanation for observed effectiveness of voltage controlled anisotropy. / Ahmed, R.; Victora, R. H.
2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7157501 (2015 IEEE International Magnetics Conference, INTERMAG 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ahmed, R & Victora, RH 2015, Possible explanation for observed effectiveness of voltage controlled anisotropy. in 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7157501, 2015 IEEE International Magnetics Conference, INTERMAG 2015, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, China, 5/11/15. https://doi.org/10.1109/INTMAG.2015.7157501

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abstract = "Spin torque MRAM offers the possibility of ultrahigh density nonvolatile data storage. However, current devices require excessive current densities to switch the magnetization: this greatly limits commercial implementation. Previous researchers [1]-[2] have experimentally demonstrated that the application of approximately 1V across an MgO thin film allows a neighboring ferromagnet to switch with much reduced applied field. It has been argued that this is caused by the voltage adjusting the Fermi level of the ferromagnet in such a way that the magnetic anisotropy is substantially reduced.",

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M3 - Conference contribution

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ER -

Possible explanation for observed effectiveness of voltage controlled anisotropy

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