Spin torque MRAM offers the possibility of ultrahigh density nonvolatile data storage. However, current devices require excessive current densities to switch the magnetization: this greatly limits commercial implementation. Previous researchers - have experimentally demonstrated that the application of approximately 1V across an MgO thin film allows a neighboring ferromagnet to switch with much reduced applied field. It has been argued that this is caused by the voltage adjusting the Fermi level of the ferromagnet in such a way that the magnetic anisotropy is substantially reduced.
|Original language||English (US)|
|Title of host publication||2015 IEEE International Magnetics Conference, INTERMAG 2015|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - Jul 14 2015|
|Event||2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China|
Duration: May 11 2015 → May 15 2015
|Name||2015 IEEE International Magnetics Conference, INTERMAG 2015|
|Other||2015 IEEE International Magnetics Conference, INTERMAG 2015|
|Period||5/11/15 → 5/15/15|
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© 2015 IEEE.