Abstract
Spin torque MRAM offers the possibility of ultrahigh density nonvolatile data storage. However, current devices require excessive current densities to switch the magnetization: this greatly limits commercial implementation. Previous researchers [1]-[2] have experimentally demonstrated that the application of approximately 1V across an MgO thin film allows a neighboring ferromagnet to switch with much reduced applied field. It has been argued that this is caused by the voltage adjusting the Fermi level of the ferromagnet in such a way that the magnetic anisotropy is substantially reduced.
Original language | English (US) |
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Title of host publication | 2015 IEEE International Magnetics Conference, INTERMAG 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781479973224 |
DOIs | |
State | Published - Jul 14 2015 |
Event | 2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China Duration: May 11 2015 → May 15 2015 |
Publication series
Name | 2015 IEEE International Magnetics Conference, INTERMAG 2015 |
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Other
Other | 2015 IEEE International Magnetics Conference, INTERMAG 2015 |
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Country/Territory | China |
City | Beijing |
Period | 5/11/15 → 5/15/15 |
Bibliographical note
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