Possible explanation for observed effectiveness of voltage controlled anisotropy

R. Ahmed, R. H. Victora

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Spin torque MRAM offers the possibility of ultrahigh density nonvolatile data storage. However, current devices require excessive current densities to switch the magnetization: this greatly limits commercial implementation. Previous researchers [1]-[2] have experimentally demonstrated that the application of approximately 1V across an MgO thin film allows a neighboring ferromagnet to switch with much reduced applied field. It has been argued that this is caused by the voltage adjusting the Fermi level of the ferromagnet in such a way that the magnetic anisotropy is substantially reduced.

Original languageEnglish (US)
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
StatePublished - Jul 14 2015
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: May 11 2015May 15 2015

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
CountryChina
CityBeijing
Period5/11/155/15/15

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