Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon-germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies. The tradeoffs available to operate this device at millimeter-wave frequencies are discussed, and calculations indicate that the fabrication of silicon monolithic millimeter-wave integrated circuits is a genuine possibility.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - Dec 1 1989|
|Event||IEEE MTT-S International Microwave Symposium Digest 1989 - Long Beach, CA, USA|
Duration: Jun 13 1989 → Jun 15 1989