Abstract
Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon-germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies. The tradeoffs available to operate this device at millimeter-wave frequencies are discussed, and calculations indicate that the fabrication of silicon monolithic millimeter-wave integrated circuits is a genuine possibility.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 817-819 |
| Number of pages | 3 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 2 |
| State | Published - Dec 1 1989 |
| Event | IEEE MTT-S International Microwave Symposium Digest 1989 - Long Beach, CA, USA Duration: Jun 13 1989 → Jun 15 1989 |