Possibility of silicon monolithic millimeterwave integrated circuits

S. A. Campbell, A. Gopinath

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Previous work on high-resistivity silicon suggests that microstrip line dielectric losses cease to be significant above 30 GHz. Silicon-germanium heterojunction bipolar transistors now provide a well-behaved three-terminal device capable of operating at microwave frequencies. The tradeoffs available to operate this device at millimeter-wave frequencies are discussed, and calculations indicate that the fabrication of silicon monolithic millimeter-wave integrated circuits is a genuine possibility.

Original languageEnglish (US)
Pages (from-to)817-819
Number of pages3
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
StatePublished - Dec 1 1989
EventIEEE MTT-S International Microwave Symposium Digest 1989 - Long Beach, CA, USA
Duration: Jun 13 1989Jun 15 1989

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