Possibilities for VDD = 0.1V logic using carbon-based tunneling field effect transistors

Yunfei Gao, Tony Low, Mark Lundstrom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

A systematic evaluation of the possibilities of low-voltage logic using carbon-based tunneling field effect transistors (TFET) is performed using the non-equilibrium green function (NEGF) formalism [1] for device simulation and ring-oscillator and load-driven inverter circuits. We found that the on-current is severely limited by quantum mechanical reflections due to wavefunction mismatch. The lower bound of subthreshold swing (SS) is limited by tunneling through the channel. Although the projected performance is well-below that of a recent prediction [2], we show that digital logic at VDD = 0.1V is possible. Finally, we compare the TFET with its MOSFET counterpart and show that for VDD=0.1V, the TFET out-performs the MOSFET.

Original languageEnglish (US)
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages180-181
Number of pages2
StatePublished - Nov 16 2009
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: Jun 16 2009Jun 18 2009

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period6/16/096/18/09

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    Gao, Y., Low, T., & Lundstrom, M. (2009). Possibilities for VDD = 0.1V logic using carbon-based tunneling field effect transistors. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 180-181). [5200680] (Digest of Technical Papers - Symposium on VLSI Technology).