POSITIVE MAGNETORESISTANCE IN THE VARIABLE-RANGE HOPPING REGION.

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Abstract

An investigation is made of the influence of the scattering of tunneling electrons on the behavior of localized wave functions in a magnetic field at large distances from a localization center. It is shown that the scattering gives rise to a universal law psi varies directly as exp( minus r/b) describing these wave functions. The values of the length b are found for all magnetic fields and these values are then used to study the field dependence of the magnetoresistance in the hopping conduction region where the length of the jump is variable (variable-range hopping). The same procedure is applied also to the case of a two-dimensional system of impurities. The asymptotic behavior of the wave functions and the magnetoresistance near an insulator-metal transition are considered in the three-dimensional case.

Original languageEnglish (US)
Pages (from-to)1311-1316
Number of pages6
JournalSoviet physics. Semiconductors
Volume17
Issue number11
StatePublished - Jan 1 1983

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