@inproceedings{0d62dc05f11f4ab79c9ee6acb3c327aa,
title = "Polysilicon-Al based ohmic contact on p-iype 3C-SiC film grown on silicon substrate",
abstract = "In this paper, a method that combines radio frequency (RF) plasma with hot filament (HF) chemical vapor deposition (CVD) together has been used to prepare 3C-SiC film. The samples obtained through the above method have been systematically demonstrated by atom force microscopy (AFM), x-ray diffraction (XRD). Its concentration is measured to be p=1.33×1017cm -3 using Hall effect. The samples have been divided into two parts: ones ohmic contact is made with deposition of aluminum directly on its surface. Alternately, the other's metal contact is deposited following a polysilicon pre-deposition. Both of them are annealed at 450, 600 and 710°C, separately. The specific contact resistance of sample without polysilicon annealed at 710°C is ρc = 0.014 Ω cm2 and that of sample with polysilicon annealed at the same condition exhibits an improved property. Its specific contact resistance can be lowered to be ρc=3. 5×10-4 Ω cm2. The mechanism for this experimental result has been explained in this paper, too. And attempt to add nanometer grain on polysilicon to lower barrier.",
keywords = "Ohmic contact, Silicon carbide, Specific resistance",
author = "Zhao Chenguang and Jiang Yanfeng and Liu Su",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/ICSICT.2006.306600",
language = "English (US)",
isbn = "1424401615",
series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
publisher = "IEEE Computer Society",
pages = "938--940",
booktitle = "ICSICT-2006",
note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",
}