Polysilicon-Al based ohmic contact on p-iype 3C-SiC film grown on silicon substrate

Zhao Chenguang, Jiang Yanfeng, Liu Su

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a method that combines radio frequency (RF) plasma with hot filament (HF) chemical vapor deposition (CVD) together has been used to prepare 3C-SiC film. The samples obtained through the above method have been systematically demonstrated by atom force microscopy (AFM), x-ray diffraction (XRD). Its concentration is measured to be p=1.33×1017cm -3 using Hall effect. The samples have been divided into two parts: ones ohmic contact is made with deposition of aluminum directly on its surface. Alternately, the other's metal contact is deposited following a polysilicon pre-deposition. Both of them are annealed at 450, 600 and 710°C, separately. The specific contact resistance of sample without polysilicon annealed at 710°C is ρc = 0.014 Ω cm2 and that of sample with polysilicon annealed at the same condition exhibits an improved property. Its specific contact resistance can be lowered to be ρc=3. 5×10-4 Ω cm2. The mechanism for this experimental result has been explained in this paper, too. And attempt to add nanometer grain on polysilicon to lower barrier.

Original languageEnglish (US)
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages938-940
Number of pages3
ISBN (Print)1424401615, 9781424401611
DOIs
StatePublished - Jan 1 2006
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: Oct 23 2006Oct 26 2006

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/23/0610/26/06

Keywords

  • Ohmic contact
  • Silicon carbide
  • Specific resistance

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