Abstract
Theoretical modeling and fabrication of polarization-insensitive semiconductor optical amplifiers that use a multi-quantum-well structure as the gain media are reported. Polarization insensitivity of gain is achieved through the introduction tensile strain into the quantum wells. Gain calculations, using the k·p method, were performed to obtain the required amount of tensile strain to obtain polarization insensitivity over a wide energy spectrum. Fabricated amplifiers show a polarization-insensitive (<1 dB) spectral width of 10 nm at 1300 nm in the InGaAsP/InP system, 15 nm at 1300 nm in the AlInGaAs/InP system, and 40 nm at 1550 nm in the AlInGaAs/InP system.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1282-1290 |
| Number of pages | 9 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 38 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2002 |
Bibliographical note
Funding Information:Manuscript received March 29, 2002; revised May 31, 2002. This work was supported by DARPA and AFOSR. P. Koonath is with Altra Broadband Inc., Irvine, CA 92618 USA (e-mail: [email protected]). S. Kim is with the Korea Telecom, Access Network Research Laboratory, Taejon, Korea 305-348 (e-mail: [email protected]). W.-J. Cho is with the Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea (e-mail: [email protected]). A. Gopinath is with the Department of Electrical Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA (e-mail: [email protected]). Publisher Item Identifier 10.1109/JQE.2002.802445.
Keywords
- Integrated optics
- Polarization
- Quantum wells
- Semiconductor optical amplifier
- Tensile strain