TY - JOUR
T1 - Plasma production of nanodevice-grade semiconductor nanocrystals
AU - Holman, Z. C.
AU - Kortshagen, U. R.
PY - 2011/5/4
Y1 - 2011/5/4
N2 - Semiconductor nanocrystals (NCs) offer new opportunities for optical and electronic devices ranging from single-electron transistors to large-area solar cells. Solution synthesis methods cannot reach the temperatures necessary to produce crystalline nanoparticles of covalently bonded materials, and most gas-phase techniques suffer from particle agglomeration and sintering. Nonthermal plasma synthesis, however, can produce high-quality NCs of key materials such as Si and Ge. In this review, we examine the current state and future challenges of the growing field of plasma-synthesized NCs from a device applications perspective. We identify NC microstructure, morphology, ensemble monodispersity, surface chemistry and doping as being vital to the success of next-generation devices, and we discuss research opportunities to understand and control these properties during plasma synthesis.
AB - Semiconductor nanocrystals (NCs) offer new opportunities for optical and electronic devices ranging from single-electron transistors to large-area solar cells. Solution synthesis methods cannot reach the temperatures necessary to produce crystalline nanoparticles of covalently bonded materials, and most gas-phase techniques suffer from particle agglomeration and sintering. Nonthermal plasma synthesis, however, can produce high-quality NCs of key materials such as Si and Ge. In this review, we examine the current state and future challenges of the growing field of plasma-synthesized NCs from a device applications perspective. We identify NC microstructure, morphology, ensemble monodispersity, surface chemistry and doping as being vital to the success of next-generation devices, and we discuss research opportunities to understand and control these properties during plasma synthesis.
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U2 - 10.1088/0022-3727/44/17/174009
DO - 10.1088/0022-3727/44/17/174009
M3 - Article
AN - SCOPUS:79954571309
SN - 0022-3727
VL - 44
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
IS - 17
M1 - 174009
ER -