Plasma passivation of III-V semiconductor surfaces

E. S. Aydil, R. A. Gottscho

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Poor electronic properties of III-V semiconductor surfaces and semiconductor-insulator interfaces resulting from a high density of surface/interface states limit III-V device technology. For this reason, passivation of III-V surfaces, in particular plasma passivation, has received attention in the last two decades. In this chapter, we review these research efforts with emphasis on in situ and real-time diagnostic methods to detect chemical and electronic changes on surfaces upon passivation. Hydrogen-atom based plasma passivation techniques, using H2, NH3, and H2S, have emerged as viable methods for removing surface states and native oxides. Improvements in III-V device performance can be made with judicious choice of the plasma operating parameters such as plasma excitation method, pressure, power, flow rate and substrate temperature. In situ and real-time surface diagnostic methods, such as photoluminescence monitoring and attenuated-total-reflection Fourier transform infrared spectroscopy (ATR-FTIR), are crucial for optimizing the process conditions.

Original languageEnglish (US)
Pages (from-to)159-188
Number of pages30
JournalMaterials Science Forum
Volume148-4
StatePublished - Dec 1 1994

Fingerprint Dive into the research topics of 'Plasma passivation of III-V semiconductor surfaces'. Together they form a unique fingerprint.

  • Cite this