Planar GaAs-AlGaAs MQW Transverse Junction Ridge Waveguide Lasers Using Shallow Zinc Diffusion

Wei Yang; Anand Gopinath; Mary Hibbs-Brenner

doi:10.1109/68.403993

Planar GaAs-AlGaAs MQW Transverse Junction Ridge Waveguide Lasers Using Shallow Zinc Diffusion

Wei Yang, Anand Gopinath, Mary Hibbs-Brenner

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A new transverse-junction ridge waveguide AlGaAs -GaAs muItiple-quantum-well laser is demonstrated. The combination of the ridge structure and transverse junction yields advantages of stable index guiding, and a greatly simplified fabrication process with a rapid thermal diffusion time as short as three minutes.

Original language	English (US)
Pages (from-to)	848-850
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	7
Issue number	8
DOIs	https://doi.org/10.1109/68.403993
State	Published - 1995

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@article{c207aedb504e498caa85231d7526c5a2,

title = "Planar GaAs-AlGaAs MQW Transverse Junction Ridge Waveguide Lasers Using Shallow Zinc Diffusion",

abstract = "A new transverse-junction ridge waveguide AlGaAs -GaAs muItiple-quantum-well laser is demonstrated. The combination of the ridge structure and transverse junction yields advantages of stable index guiding, and a greatly simplified fabrication process with a rapid thermal diffusion time as short as three minutes.",

author = "Wei Yang and Anand Gopinath and Mary Hibbs-Brenner",

year = "1995",

doi = "10.1109/68.403993",

language = "English (US)",

volume = "7",

pages = "848--850",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

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TY - JOUR

T1 - Planar GaAs-AlGaAs MQW Transverse Junction Ridge Waveguide Lasers Using Shallow Zinc Diffusion

AU - Yang, Wei

AU - Gopinath, Anand

AU - Hibbs-Brenner, Mary

PY - 1995

Y1 - 1995

N2 - A new transverse-junction ridge waveguide AlGaAs -GaAs muItiple-quantum-well laser is demonstrated. The combination of the ridge structure and transverse junction yields advantages of stable index guiding, and a greatly simplified fabrication process with a rapid thermal diffusion time as short as three minutes.

AB - A new transverse-junction ridge waveguide AlGaAs -GaAs muItiple-quantum-well laser is demonstrated. The combination of the ridge structure and transverse junction yields advantages of stable index guiding, and a greatly simplified fabrication process with a rapid thermal diffusion time as short as three minutes.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029357331&partnerID=8YFLogxK

U2 - 10.1109/68.403993

DO - 10.1109/68.403993

M3 - Article

AN - SCOPUS:0029357331

SN - 1041-1135

VL - 7

SP - 848

EP - 850

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

ER -

Planar GaAs-AlGaAs MQW Transverse Junction Ridge Waveguide Lasers Using Shallow Zinc Diffusion

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