TY - JOUR
T1 - Piezoelectric thin films formed by MOD on cantilever beams for micro sensors and actuators
AU - Cui, T.
AU - Markus, D.
AU - Zurn, S.
AU - Polla, D. L.
PY - 2004/1/1
Y1 - 2004/1/1
N2 - Novel piezoelectric cantilever beams for micro sensors and actuators based on PZT thin films have been batch fabricated by surface micromachining. Lead zirconate titanate (PZT) thin film is formed by metalorganic deposition (MOD) on Pt/Ti/SiO2/Si (100) substrates and Pt/Ti/LTO/Si3N 4 cantilever beams and then annealed at 700°C in air. The PZT thin film is 0.5 μm thick and has dielectric permittivity of 1698, remanent polarization of 13.66 μC/cm2, and coercive field of 44.5 kV/cm. The influence of deposition temperatures on PZT thin film stress has been investigated. When continuously controlling the deposition temperatures, the stress of the thin film is reduced from 0.313 × 108 to 0.269 × 108 N/m, that is 16.4% decrease. With the total 120 designed devices on 4-inch wafers, the number of functional devices is increased from 82 to 97, that is 12.47%.
AB - Novel piezoelectric cantilever beams for micro sensors and actuators based on PZT thin films have been batch fabricated by surface micromachining. Lead zirconate titanate (PZT) thin film is formed by metalorganic deposition (MOD) on Pt/Ti/SiO2/Si (100) substrates and Pt/Ti/LTO/Si3N 4 cantilever beams and then annealed at 700°C in air. The PZT thin film is 0.5 μm thick and has dielectric permittivity of 1698, remanent polarization of 13.66 μC/cm2, and coercive field of 44.5 kV/cm. The influence of deposition temperatures on PZT thin film stress has been investigated. When continuously controlling the deposition temperatures, the stress of the thin film is reduced from 0.313 × 108 to 0.269 × 108 N/m, that is 16.4% decrease. With the total 120 designed devices on 4-inch wafers, the number of functional devices is increased from 82 to 97, that is 12.47%.
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U2 - 10.1007/s00542-003-0319-6
DO - 10.1007/s00542-003-0319-6
M3 - Article
AN - SCOPUS:1142276131
VL - 10
SP - 137
EP - 141
JO - Microsystem Technologies
JF - Microsystem Technologies
SN - 0946-7076
IS - 2
ER -