Ferroelectric Pb(Zr0.52Ti0.48)O3 thin films were deposited on Pt/TiO2/SiO2/Si substrates by the sol-gel technique. It was found that above 550 °C the film transforms completely to the perovskite and forms a typical ferroelectric polarization-electric field (P-E) hysteresis loop. The effective d33 of piezoelectric PZT films was measured using a Michelson interferometer. The piezoelectric hysteresis loop was measured according to dc bias voltage and the maximum piezoelectric coefficient for the 0.48-μm-thick poled film was about 130 pm/V at -3 V. Acoustic emission (AE) wave propagation through PZT films connected to a charge amplifier was observed. These properties suggested that PZT film is a very promising material for integrated AE sensor applications, with promise for improved reliability.
|Original language||English (US)|
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||7 A|
|State||Published - 1999|