Piezoelectric properties and acoustic wave detection of Pb(Zr0.52Ti0.48)O3 thin films for microelectromechanical systems sensor

Chae Ryong Cho; Lorraine F. Francis; Min Su Jang

doi:10.1143/jjap.38.l751

Piezoelectric properties and acoustic wave detection of Pb(Zr_0.52Ti_0.48)O₃ thin films for microelectromechanical systems sensor

Chae Ryong Cho, Lorraine F. Francis, Min Su Jang

Chemical Engineering and Materials Science

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Abstract

Ferroelectric Pb(Zr_0.52Ti_0.48)O₃ thin films were deposited on Pt/TiO₂/SiO₂/Si substrates by the sol-gel technique. It was found that above 550 °C the film transforms completely to the perovskite and forms a typical ferroelectric polarization-electric field (P-E) hysteresis loop. The effective d₃₃ of piezoelectric PZT films was measured using a Michelson interferometer. The piezoelectric hysteresis loop was measured according to dc bias voltage and the maximum piezoelectric coefficient for the 0.48-μm-thick poled film was about 130 pm/V at -3 V. Acoustic emission (AE) wave propagation through PZT films connected to a charge amplifier was observed. These properties suggested that PZT film is a very promising material for integrated AE sensor applications, with promise for improved reliability.

Original language	English (US)
Pages (from-to)	L751-L754
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	38
Issue number	7 A
DOIs	https://doi.org/10.1143/jjap.38.l751
State	Published - 1999

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title = "Piezoelectric properties and acoustic wave detection of Pb(Zr0.52Ti0.48)O3 thin films for microelectromechanical systems sensor",

abstract = "Ferroelectric Pb(Zr0.52Ti0.48)O3 thin films were deposited on Pt/TiO2/SiO2/Si substrates by the sol-gel technique. It was found that above 550 °C the film transforms completely to the perovskite and forms a typical ferroelectric polarization-electric field (P-E) hysteresis loop. The effective d33 of piezoelectric PZT films was measured using a Michelson interferometer. The piezoelectric hysteresis loop was measured according to dc bias voltage and the maximum piezoelectric coefficient for the 0.48-μm-thick poled film was about 130 pm/V at -3 V. Acoustic emission (AE) wave propagation through PZT films connected to a charge amplifier was observed. These properties suggested that PZT film is a very promising material for integrated AE sensor applications, with promise for improved reliability.",

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T1 - Piezoelectric properties and acoustic wave detection of Pb(Zr0.52Ti0.48)O3 thin films for microelectromechanical systems sensor

AU - Cho, Chae Ryong

AU - Francis, Lorraine F.

AU - Jang, Min Su

PY - 1999

Y1 - 1999

N2 - Ferroelectric Pb(Zr0.52Ti0.48)O3 thin films were deposited on Pt/TiO2/SiO2/Si substrates by the sol-gel technique. It was found that above 550 °C the film transforms completely to the perovskite and forms a typical ferroelectric polarization-electric field (P-E) hysteresis loop. The effective d33 of piezoelectric PZT films was measured using a Michelson interferometer. The piezoelectric hysteresis loop was measured according to dc bias voltage and the maximum piezoelectric coefficient for the 0.48-μm-thick poled film was about 130 pm/V at -3 V. Acoustic emission (AE) wave propagation through PZT films connected to a charge amplifier was observed. These properties suggested that PZT film is a very promising material for integrated AE sensor applications, with promise for improved reliability.

AB - Ferroelectric Pb(Zr0.52Ti0.48)O3 thin films were deposited on Pt/TiO2/SiO2/Si substrates by the sol-gel technique. It was found that above 550 °C the film transforms completely to the perovskite and forms a typical ferroelectric polarization-electric field (P-E) hysteresis loop. The effective d33 of piezoelectric PZT films was measured using a Michelson interferometer. The piezoelectric hysteresis loop was measured according to dc bias voltage and the maximum piezoelectric coefficient for the 0.48-μm-thick poled film was about 130 pm/V at -3 V. Acoustic emission (AE) wave propagation through PZT films connected to a charge amplifier was observed. These properties suggested that PZT film is a very promising material for integrated AE sensor applications, with promise for improved reliability.

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Piezoelectric properties and acoustic wave detection of Pb(Zr_0.52Ti_0.48)O₃ thin films for microelectromechanical systems sensor

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