Abstract
Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in l-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission-diffusion theory. A new piezotronic switch device with an "on" and "off" ratio of ∼120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.
Original language | English (US) |
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Pages (from-to) | 3973-3977 |
Number of pages | 5 |
Journal | Nano letters |
Volume | 8 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2008 |