Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires

Jun Zhou, Peng Fei, Yudong Gu, Wenjie Mai, Yifan Gao, Rusen Yang, Gang Bao, Zhong Lin Wang

Research output: Contribution to journalArticlepeer-review

233 Scopus citations


Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in l-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission-diffusion theory. A new piezotronic switch device with an "on" and "off" ratio of ∼120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.

Original languageEnglish (US)
Pages (from-to)3973-3977
Number of pages5
JournalNano letters
Issue number11
StatePublished - Nov 2008

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