Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires

Jun Zhou, Peng Fei, Yudong Gu, Wenjie Mai, Yifan Gao, Rusen Yang, Gang Bao, Zhong Lin Wang

Research output: Contribution to journalArticle

215 Scopus citations

Abstract

Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in l-V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission-diffusion theory. A new piezotronic switch device with an "on" and "off" ratio of ∼120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.

Original languageEnglish (US)
Pages (from-to)3973-3977
Number of pages5
JournalNano letters
Volume8
Issue number11
DOIs
StatePublished - Nov 1 2008

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    Zhou, J., Fei, P., Gu, Y., Mai, W., Gao, Y., Yang, R., Bao, G., & Wang, Z. L. (2008). Piezoelectric-potential-controlled polarity-reversible Schottky diodes and switches of ZnO wires. Nano letters, 8(11), 3973-3977. https://doi.org/10.1021/nl802497e