Abstract
We present a detailed view of the diffusion of silicon dimers on the silicon (001) surface. Through a combination of atom tracking and ab initio modeling, the dimer is shown to move one atom at a time rather than as a two-atom unit. The details of the pathway depend on the diffusion channel: On top of dimer rows, the two atoms of a dimer separate but remain bound during diffusion. In the troughs between dimer rows, the two atoms separate completely and move independently before rejoining in a new location.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1598-1601 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 59 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1999 |
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