Photoreflectance of AlxGa1-xAs and Al xGa1-xAs/GaAs interfaces and high-electron-mobility transistors

Michael Sydor; Neal Jahren; W. C. Mitchel; W. V. Lampert; T. W. Haas; M. Y. Yen; S. M. Mudare; D. H. Tomich

doi:10.1063/1.344532

Photoreflectance of Al_xGa_1-xAs and Al _xGa_1-xAs/GaAs interfaces and high-electron-mobility transistors

Michael Sydor
, Neal Jahren
, W. C. Mitchel
, W. V. Lampert
, T. W. Haas
, M. Y. Yen
, S. M. Mudare
, D. H. Tomich

Ecology, Evolution and Behavior

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

Photoreflectance is used to measure Al_xGa_1-xAs composition, and to determine carrier concentrations in Si-doped AlGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photoreflectance from the cap/(doped AlGaAs) interface produces a broad signal which distorts the entire spectrum, making it hard to locate the GaAs and AlGaAs band edges precisely. A similar broad signal from modulation-doped heterostructures is apparently associated with samples that show the presence of two-dimensional electron gas.

Original language	English (US)
Pages (from-to)	7423-7429
Number of pages	7
Journal	Journal of Applied Physics
Volume	67
Issue number	12
DOIs	https://doi.org/10.1063/1.344532
State	Published - 1990

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title = "Photoreflectance of AlxGa1-xAs and Al xGa1-xAs/GaAs interfaces and high-electron-mobility transistors",

abstract = "Photoreflectance is used to measure AlxGa1-xAs composition, and to determine carrier concentrations in Si-doped AlGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photoreflectance from the cap/(doped AlGaAs) interface produces a broad signal which distorts the entire spectrum, making it hard to locate the GaAs and AlGaAs band edges precisely. A similar broad signal from modulation-doped heterostructures is apparently associated with samples that show the presence of two-dimensional electron gas.",

author = "Michael Sydor and Neal Jahren and Mitchel, \{W. C.\} and Lampert, \{W. V.\} and Haas, \{T. W.\} and Yen, \{M. Y.\} and Mudare, \{S. M.\} and Tomich, \{D. H.\}",

year = "1990",

doi = "10.1063/1.344532",

language = "English (US)",

volume = "67",

pages = "7423--7429",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Photoreflectance of AlxGa1-xAs and Al xGa1-xAs/GaAs interfaces and high-electron-mobility transistors

AU - Sydor, Michael

AU - Jahren, Neal

AU - Mitchel, W. C.

AU - Lampert, W. V.

AU - Haas, T. W.

AU - Yen, M. Y.

AU - Mudare, S. M.

AU - Tomich, D. H.

PY - 1990

Y1 - 1990

N2 - Photoreflectance is used to measure AlxGa1-xAs composition, and to determine carrier concentrations in Si-doped AlGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photoreflectance from the cap/(doped AlGaAs) interface produces a broad signal which distorts the entire spectrum, making it hard to locate the GaAs and AlGaAs band edges precisely. A similar broad signal from modulation-doped heterostructures is apparently associated with samples that show the presence of two-dimensional electron gas.

AB - Photoreflectance is used to measure AlxGa1-xAs composition, and to determine carrier concentrations in Si-doped AlGaAs epilayers capped with GaAs. Undoped caps are generally depleted, and do not show a usual GaAs photoreflectance. However, photoreflectance from the cap/(doped AlGaAs) interface produces a broad signal which distorts the entire spectrum, making it hard to locate the GaAs and AlGaAs band edges precisely. A similar broad signal from modulation-doped heterostructures is apparently associated with samples that show the presence of two-dimensional electron gas.

UR - https://www.scopus.com/pages/publications/0011575401

UR - https://www.scopus.com/pages/publications/0011575401#tab=citedBy

U2 - 10.1063/1.344532

DO - 10.1063/1.344532

M3 - Article

AN - SCOPUS:0011575401

SN - 0021-8979

VL - 67

SP - 7423

EP - 7429

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Photoreflectance of Al_xGa_1-xAs and Al _xGa_1-xAs/GaAs interfaces and high-electron-mobility transistors

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