Photoemission study of C60 -induced barrier reduction for hole injection at N, N′ -bis(naphthalene-1-y1)- N, N′ -bis(phenyl) benzidine/Al

Z. T. Xie; B. F. Ding; X. D. Gao; Y. T. You; Z. Y. Sun; W. H. Zhang; X. M. Ding; X. Y. Hou

doi:10.1063/1.3117831

Photoemission study of C₆₀ -induced barrier reduction for hole injection at N, N′ -bis(naphthalene-1-y1)- N, N′ -bis(phenyl) benzidine/Al

Z. T. Xie, B. F. Ding, X. D. Gao, Y. T. You, Z. Y. Sun, W. H. Zhang, X. M. Ding, X. Y. Hou

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Synchrotron radiation photoemission study showed that the energy level alignment at the interface between N, N′ -bis(naphthalene-1-y1)- N, N′ -bis(phenyl) benzidine (NPB), a typical hole transport material, and Al could be adjusted by precovering a thin C₆₀ layer on Al. The interface dipoles so formed could shift both the highest occupied molecular orbital level of NPB and the secondary electron cutoff measured at the early stage of the NPB deposition. The barrier height for hole injection from Al to NPB could thus be lowered by as much as 0.98 eV, and the optimal thickness of the inserted C60 layer was found to be 8-12 Å.

Original language	English (US)
Article number	106105
Journal	Journal of Applied Physics
Volume	105
Issue number	10
DOIs	https://doi.org/10.1063/1.3117831
State	Published - 2009

Publisher link

10.1063/1.3117831

Find It

Find It at U of M Libraries

Cite this

@article{50c5fe2da8794efd85f987c307a3f483,

title = "Photoemission study of C60 -induced barrier reduction for hole injection at N, N′ -bis(naphthalene-1-y1)- N, N′ -bis(phenyl) benzidine/Al",

abstract = "Synchrotron radiation photoemission study showed that the energy level alignment at the interface between N, N′ -bis(naphthalene-1-y1)- N, N′ -bis(phenyl) benzidine (NPB), a typical hole transport material, and Al could be adjusted by precovering a thin C60 layer on Al. The interface dipoles so formed could shift both the highest occupied molecular orbital level of NPB and the secondary electron cutoff measured at the early stage of the NPB deposition. The barrier height for hole injection from Al to NPB could thus be lowered by as much as 0.98 eV, and the optimal thickness of the inserted C60 layer was found to be 8-12 {\AA}.",

author = "Xie, {Z. T.} and Ding, {B. F.} and Gao, {X. D.} and You, {Y. T.} and Sun, {Z. Y.} and Zhang, {W. H.} and Ding, {X. M.} and Hou, {X. Y.}",

year = "2009",

doi = "10.1063/1.3117831",

language = "English (US)",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Photoemission study of C60 -induced barrier reduction for hole injection at N, N′ -bis(naphthalene-1-y1)- N, N′ -bis(phenyl) benzidine/Al

AU - Xie, Z. T.

AU - Ding, B. F.

AU - Gao, X. D.

AU - You, Y. T.

AU - Sun, Z. Y.

AU - Zhang, W. H.

AU - Ding, X. M.

AU - Hou, X. Y.

PY - 2009

Y1 - 2009

N2 - Synchrotron radiation photoemission study showed that the energy level alignment at the interface between N, N′ -bis(naphthalene-1-y1)- N, N′ -bis(phenyl) benzidine (NPB), a typical hole transport material, and Al could be adjusted by precovering a thin C60 layer on Al. The interface dipoles so formed could shift both the highest occupied molecular orbital level of NPB and the secondary electron cutoff measured at the early stage of the NPB deposition. The barrier height for hole injection from Al to NPB could thus be lowered by as much as 0.98 eV, and the optimal thickness of the inserted C60 layer was found to be 8-12 Å.

AB - Synchrotron radiation photoemission study showed that the energy level alignment at the interface between N, N′ -bis(naphthalene-1-y1)- N, N′ -bis(phenyl) benzidine (NPB), a typical hole transport material, and Al could be adjusted by precovering a thin C60 layer on Al. The interface dipoles so formed could shift both the highest occupied molecular orbital level of NPB and the secondary electron cutoff measured at the early stage of the NPB deposition. The barrier height for hole injection from Al to NPB could thus be lowered by as much as 0.98 eV, and the optimal thickness of the inserted C60 layer was found to be 8-12 Å.

UR - http://www.scopus.com/inward/record.url?scp=66549109125&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=66549109125&partnerID=8YFLogxK

U2 - 10.1063/1.3117831

DO - 10.1063/1.3117831

M3 - Article

AN - SCOPUS:66549109125

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 106105

ER -

Photoemission study of C₆₀ -induced barrier reduction for hole injection at N, N′ -bis(naphthalene-1-y1)- N, N′ -bis(phenyl) benzidine/Al

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this