Photoelectrochemical investigations of thin metal-oxide films: TiO2, Al2O3, and HfO2 on the parent metals

Johanes P.H. Sukamto; Christopher S. McMillan; William Smyrl

doi:10.1016/0013-4686(93)80005-K

Photoelectrochemical investigations of thin metal-oxide films: TiO₂, Al₂O₃, and HfO₂ on the parent metals

Johanes P.H. Sukamto, Christopher S. McMillan, William Smyrl

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Photoelectrochemical measurements on thin metal-oxide films are discussed. It is shown that for very thin films, multiple internal reflection effects cause the photocurrent to be a strong function of film thickness. The discussion also includes metal-oxide/electrolyte interface dominated photocurrent and metal-oxide/metal interface dominated internal photoemission processes.

Original language	English (US)
Pages (from-to)	15-27
Number of pages	13
Journal	Electrochimica Acta
Volume	38
Issue number	1
DOIs	https://doi.org/10.1016/0013-4686(93)80005-K
State	Published - Jan 1993

Keywords

dye sensitization
internal reflections.
photoelectrochemical microscopy
photoemission

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abstract = "Photoelectrochemical measurements on thin metal-oxide films are discussed. It is shown that for very thin films, multiple internal reflection effects cause the photocurrent to be a strong function of film thickness. The discussion also includes metal-oxide/electrolyte interface dominated photocurrent and metal-oxide/metal interface dominated internal photoemission processes.",

keywords = "dye sensitization, internal reflections., photoelectrochemical microscopy, photoemission",

author = "Sukamto, {Johanes P.H.} and McMillan, {Christopher S.} and William Smyrl",

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T2 - TiO2, Al2O3, and HfO2 on the parent metals

AU - Sukamto, Johanes P.H.

AU - McMillan, Christopher S.

AU - Smyrl, William

PY - 1993/1

Y1 - 1993/1

N2 - Photoelectrochemical measurements on thin metal-oxide films are discussed. It is shown that for very thin films, multiple internal reflection effects cause the photocurrent to be a strong function of film thickness. The discussion also includes metal-oxide/electrolyte interface dominated photocurrent and metal-oxide/metal interface dominated internal photoemission processes.

AB - Photoelectrochemical measurements on thin metal-oxide films are discussed. It is shown that for very thin films, multiple internal reflection effects cause the photocurrent to be a strong function of film thickness. The discussion also includes metal-oxide/electrolyte interface dominated photocurrent and metal-oxide/metal interface dominated internal photoemission processes.

KW - dye sensitization

KW - internal reflections.

KW - photoelectrochemical microscopy

KW - photoemission

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SN - 0013-4686

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Photoelectrochemical investigations of thin metal-oxide films: TiO₂, Al₂O₃, and HfO₂ on the parent metals

Abstract

Keywords

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