Abstract
Degradation of organic light-emitting devices (OLEDs) upon ultraviolet (UV) irradiation has been studied by measuring luminance-voltage (L-V) and current-voltage (I-V) characteristics of the devices in a nitrogen-filled glove-box. Photo-oxidation or reaction is no longer the main origin of the degradation for the devices protected by nitrogen. Conventional double-layer OLEDs with tris(8-hydroxyquinoline) aluminum (Alq3) as the electron transport material and single-layer devices containing Alq3 as the only organic material exhibit different degradation behaviors: both L-V and I-V characteristics degrade severely for the irradiated double-layer devices, whereas whether I-V degrades or not in a single-layer device is closely related to the species of the charge carriers flowing in the device. By comparing electroluminescent and photoluminescent degradation behaviors of the single-Alq3-layer devices, we conclude that lowered fluorescent quantum efficiency and hole current after UV irradiation are two origins of the degraded characteristics of the devices isolated from the moist environment.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2171-2174 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 516 |
| Issue number | 8 |
| DOIs | |
| State | Published - Feb 29 2008 |
Bibliographical note
Funding Information:This work is supported by the Chinese National Key Basic Research Special Fund and the National Natural Science Foundation of China.
Keywords
- Electrical properties and measurements
- Electronic devices
- Organic semiconductors
- Photoluminescence