Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors

Chi Ti Hsieh; D. S. Citrin; P. P. Ruden

doi:10.1109/CLEO.2008.4552170

Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors

Chi Ti Hsieh, D. S. Citrin, P. P. Ruden

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The photocurrents of carbon-nanotube field-effect transistors are small due to the small exciton ionization rate and large exciton nonradiative-decay rate, and the photocurrent gain is small for the long-channel devices.

Original language	English (US)
Title of host publication	2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs	https://doi.org/10.1109/CLEO.2008.4552170
State	Published - 2008
Event	Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States Duration: May 4 2008 → May 9 2008

Publication series

Name	2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Other

Other	Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
Country	United States
City	San Jose, CA
Period	5/4/08 → 5/9/08

Access

10.1109/CLEO.2008.4552170

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Hsieh, C. T., Citrin, D. S., & Ruden, P. P. (2008). Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors. In 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS [4552170] (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS). https://doi.org/10.1109/CLEO.2008.4552170

Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors. / Hsieh, Chi Ti; Citrin, D. S.; Ruden, P. P.

2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS. 2008. 4552170 (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hsieh, CT, Citrin, DS & Ruden, PP 2008, Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors. in 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS., 4552170, 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS, Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008, San Jose, CA, United States, 5/4/08. https://doi.org/10.1109/CLEO.2008.4552170

Hsieh CT, Citrin DS, Ruden PP. Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors. In 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS. 2008. 4552170. (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS). https://doi.org/10.1109/CLEO.2008.4552170

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title = "Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors",

abstract = "The photocurrents of carbon-nanotube field-effect transistors are small due to the small exciton ionization rate and large exciton nonradiative-decay rate, and the photocurrent gain is small for the long-channel devices.",

author = "Hsieh, {Chi Ti} and Citrin, {D. S.} and Ruden, {P. P.}",

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