Photoconductivity of ambipolar long-channel carbon-nanotube field-effect transistors

Chi Ti Hsieh, D. S. Citrin, P P Ruden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The photocurrents of carbon-nanotube field-effect transistors are small due to the small exciton ionization rate and large exciton nonradiative-decay rate, and the photocurrent gain is small for the long-channel devices.

Original languageEnglish (US)
Title of host publication2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS
DOIs
StatePublished - 2008
EventConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Publication series

NameConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Other

OtherConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period5/4/085/9/08

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