Abstract
The metastable excess conductivity sigma (E) observed in hydrogenated amorphous silicon (a-Si:H), that is alternately doped n- and p- type, is compared with the Staebler-Wronski effect and other metastable conductivity changes observed in compensated a-Si:H and in oxidized p- type a-Si:H, respectively. We find that Dohler's model of electron-hole pair separation in the pn-junction fields cannot account for the long life of sigma (E) near and above 300 degree K. A defect complex associated with boron having a large configurational relaxation after releasing an electron by photoexcitation is considered as an explanation for sigma (E).
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposia Proceedings |
| Publisher | Materials Research Soc |
| Pages | 127-131 |
| Number of pages | 5 |
| ISBN (Print) | 0931837146 |
| State | Published - Dec 1 1985 |
Publication series
| Name | Materials Research Society Symposia Proceedings |
|---|---|
| Volume | 49 |
| ISSN (Print) | 0272-9172 |
Fingerprint Dive into the research topics of 'PHOTO-INDUCED EXCESS CONDUCTIVITY IN DOPING MODULATED AMORPHOUS SEMICONDUCTORS.'. Together they form a unique fingerprint.
Cite this
Kakalios, J., & Fritzsche, H. (1985). PHOTO-INDUCED EXCESS CONDUCTIVITY IN DOPING MODULATED AMORPHOUS SEMICONDUCTORS. In Materials Research Society Symposia Proceedings (pp. 127-131). (Materials Research Society Symposia Proceedings; Vol. 49). Materials Research Soc.