PHOTO-INDUCED EXCESS CONDUCTIVITY IN DOPING MODULATED AMORPHOUS SEMICONDUCTORS.

J. Kakalios, H. Fritzsche

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The metastable excess conductivity sigma (E) observed in hydrogenated amorphous silicon (a-Si:H), that is alternately doped n- and p- type, is compared with the Staebler-Wronski effect and other metastable conductivity changes observed in compensated a-Si:H and in oxidized p- type a-Si:H, respectively. We find that Dohler's model of electron-hole pair separation in the pn-junction fields cannot account for the long life of sigma (E) near and above 300 degree K. A defect complex associated with boron having a large configurational relaxation after releasing an electron by photoexcitation is considered as an explanation for sigma (E).

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages127-131
Number of pages5
ISBN (Print)0931837146
StatePublished - Dec 1 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume49
ISSN (Print)0272-9172

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    Kakalios, J., & Fritzsche, H. (1985). PHOTO-INDUCED EXCESS CONDUCTIVITY IN DOPING MODULATED AMORPHOUS SEMICONDUCTORS. In Materials Research Society Symposia Proceedings (pp. 127-131). (Materials Research Society Symposia Proceedings; Vol. 49). Materials Research Soc.