TY - GEN
T1 - PHOTO-INDUCED EXCESS CONDUCTIVITY IN DOPING MODULATED AMORPHOUS SEMICONDUCTORS.
AU - Kakalios, J.
AU - Fritzsche, H.
PY - 1985/12/1
Y1 - 1985/12/1
N2 - The metastable excess conductivity sigma (E) observed in hydrogenated amorphous silicon (a-Si:H), that is alternately doped n- and p- type, is compared with the Staebler-Wronski effect and other metastable conductivity changes observed in compensated a-Si:H and in oxidized p- type a-Si:H, respectively. We find that Dohler's model of electron-hole pair separation in the pn-junction fields cannot account for the long life of sigma (E) near and above 300 degree K. A defect complex associated with boron having a large configurational relaxation after releasing an electron by photoexcitation is considered as an explanation for sigma (E).
AB - The metastable excess conductivity sigma (E) observed in hydrogenated amorphous silicon (a-Si:H), that is alternately doped n- and p- type, is compared with the Staebler-Wronski effect and other metastable conductivity changes observed in compensated a-Si:H and in oxidized p- type a-Si:H, respectively. We find that Dohler's model of electron-hole pair separation in the pn-junction fields cannot account for the long life of sigma (E) near and above 300 degree K. A defect complex associated with boron having a large configurational relaxation after releasing an electron by photoexcitation is considered as an explanation for sigma (E).
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M3 - Conference contribution
AN - SCOPUS:0022334523
SN - 0931837146
T3 - Materials Research Society Symposia Proceedings
SP - 127
EP - 131
BT - Materials Research Society Symposia Proceedings
PB - Materials Research Soc
ER -