Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

Roberto Grassi; Stefano Poli; Susanna Reggiani; Antonio Gnudi; Massimo Rudan; Giorgio Baccarani

doi:10.1109/ESSDERC.2007.4430924

Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

Roberto Grassi, Stefano Poli, Susanna Reggiani, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the offcurrent limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO₂ and of 10 nm with HfO₂: as gate dielectrics.

Original language	English (US)
Title of host publication	ESSDERC07 - 2007 37th European Solid State Device Research Conference
Publisher	IEEE Computer Society
Pages	247-250
Number of pages	4
ISBN (Print)	1424411238, 9781424411238
DOIs	https://doi.org/10.1109/ESSDERC.2007.4430924
State	Published - 2007
Event	ESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany Duration: Sep 11 2007 → Sep 13 2007

Publication series

Name	ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
Volume	2007

Other

Other	ESSDERC 2007 - 37th European Solid-State Device Research Conference
Country/Territory	Germany
City	Munich
Period	9/11/07 → 9/13/07

Bibliographical note

Funding Information:
The work has been partially supported by EU IST Network SINANO (Contract No. 506844) and PULLNANO project (FP6 IST-026828-IP).

Publisher link

10.1109/ESSDERC.2007.4430924

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Grassi, R., Poli, S., Reggiani, S., Gnudi, A., Rudan, M., & Baccarani, G. (2007). Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. In ESSDERC07 - 2007 37th European Solid State Device Research Conference (pp. 247-250). [4430924] (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference; Vol. 2007). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2007.4430924

Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. / Grassi, Roberto; Poli, Stefano; Reggiani, Susanna et al.
ESSDERC07 - 2007 37th European Solid State Device Research Conference. IEEE Computer Society, 2007. p. 247-250 4430924 (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference; Vol. 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grassi, R, Poli, S, Reggiani, S, Gnudi, A, Rudan, M & Baccarani, G 2007, Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. in ESSDERC07 - 2007 37th European Solid State Device Research Conference., 4430924, ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference, vol. 2007, IEEE Computer Society, pp. 247-250, ESSDERC 2007 - 37th European Solid-State Device Research Conference, Munich, Germany, 9/11/07. https://doi.org/10.1109/ESSDERC.2007.4430924

Grassi R, Poli S, Reggiani S, Gnudi A, Rudan M, Baccarani G. Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. In ESSDERC07 - 2007 37th European Solid State Device Research Conference. IEEE Computer Society. 2007. p. 247-250. 4430924. (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2007.4430924

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abstract = "The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the offcurrent limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2: as gate dielectrics.",

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AU - Poli, Stefano

AU - Reggiani, Susanna

AU - Gnudi, Antonio

AU - Rudan, Massimo

AU - Baccarani, Giorgio

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AB - The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the offcurrent limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2: as gate dielectrics.

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Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

Abstract

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