Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

Roberto Grassi, Stefano Poli, Susanna Reggiani, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the offcurrent limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2: as gate dielectrics.

Original languageEnglish (US)
Title of host publicationESSDERC07 - 2007 37th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages247-250
Number of pages4
ISBN (Print)1424411238, 9781424411238
DOIs
StatePublished - 2007
EventESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany
Duration: Sep 11 2007Sep 13 2007

Publication series

NameESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
Volume2007

Other

OtherESSDERC 2007 - 37th European Solid-State Device Research Conference
CountryGermany
CityMunich
Period9/11/079/13/07

Bibliographical note

Funding Information:
The work has been partially supported by EU IST Network SINANO (Contract No. 506844) and PULLNANO project (FP6 IST-026828-IP).

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