The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the offcurrent limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2: as gate dielectrics.
|Original language||English (US)|
|Title of host publication||ESSDERC07 - 2007 37th European Solid State Device Research Conference|
|Publisher||IEEE Computer Society|
|Number of pages||4|
|ISBN (Print)||1424411238, 9781424411238|
|State||Published - 2007|
|Event||ESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany|
Duration: Sep 11 2007 → Sep 13 2007
|Name||ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference|
|Other||ESSDERC 2007 - 37th European Solid-State Device Research Conference|
|Period||9/11/07 → 9/13/07|
Bibliographical noteFunding Information:
The work has been partially supported by EU IST Network SINANO (Contract No. 506844) and PULLNANO project (FP6 IST-026828-IP).