Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials

Roberto Grassi, Stefano Poli, Susanna Reggiani, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the offcurrent limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2: as gate dielectrics.

Original languageEnglish (US)
Title of host publicationESSDERC07 - 2007 37th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages247-250
Number of pages4
ISBN (Print)1424411238, 9781424411238
DOIs
StatePublished - Jan 1 2007
EventESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany
Duration: Sep 11 2007Sep 13 2007

Publication series

NameESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
Volume2007

Other

OtherESSDERC 2007 - 37th European Solid-State Device Research Conference
CountryGermany
CityMunich
Period9/11/079/13/07

Fingerprint

Phonon scattering
Chirality
Gate dielectrics
Field effect transistors
Oxides
Scalability
Acoustics
High-k dielectric

Cite this

Grassi, R., Poli, S., Reggiani, S., Gnudi, A., Rudan, M., & Baccarani, G. (2007). Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. In ESSDERC07 - 2007 37th European Solid State Device Research Conference (pp. 247-250). [4430924] (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference; Vol. 2007). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2007.4430924

Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. / Grassi, Roberto; Poli, Stefano; Reggiani, Susanna; Gnudi, Antonio; Rudan, Massimo; Baccarani, Giorgio.

ESSDERC07 - 2007 37th European Solid State Device Research Conference. IEEE Computer Society, 2007. p. 247-250 4430924 (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference; Vol. 2007).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Grassi, R, Poli, S, Reggiani, S, Gnudi, A, Rudan, M & Baccarani, G 2007, Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. in ESSDERC07 - 2007 37th European Solid State Device Research Conference., 4430924, ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference, vol. 2007, IEEE Computer Society, pp. 247-250, ESSDERC 2007 - 37th European Solid-State Device Research Conference, Munich, Germany, 9/11/07. https://doi.org/10.1109/ESSDERC.2007.4430924
Grassi R, Poli S, Reggiani S, Gnudi A, Rudan M, Baccarani G. Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. In ESSDERC07 - 2007 37th European Solid State Device Research Conference. IEEE Computer Society. 2007. p. 247-250. 4430924. (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2007.4430924
Grassi, Roberto ; Poli, Stefano ; Reggiani, Susanna ; Gnudi, Antonio ; Rudan, Massimo ; Baccarani, Giorgio. / Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials. ESSDERC07 - 2007 37th European Solid State Device Research Conference. IEEE Computer Society, 2007. pp. 247-250 (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference).
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