Phonon-assisted carrier transport through a lattice-mismatched interface

Hyong Seo Yoon, Juyeong Oh, Jae Young Park, Jeong Seob Kang, Junyoung Kwon, Teresa Cusati, Gianluca Fiori, Giuseppe Iannaccone, Alessandro Fortunelli, V. Ongun Ozcelik, Gwan Hyoung Lee, Tony Low, Seong Chan Jun

Research output: Contribution to journalArticle

Abstract

MoS2 typically exhibits unconventional layer-thickness-dependent electronic properties. It also exhibits layer-dependent band structures including indirect-to-direct band transitions, owing to which the electronic and carrier transport properties of a lattice-mismatched, conducting, two-dimensional junction are distinct with the naturally stepwise junction behaving as a 1D junction. We found distinguishable effects at the interface of vertically stacked MoS2. The results revealed that misorientationally stacked layers exhibited significantly low junction resistance and independent energy bandgaps without bending owing to their effectively decoupled behavior. Further, phonon-assisted carriers dominantly affected the lattice-mismatched interface owing to its low junction resistance, as determined via low-temperature measurement. Our results could facilitate the realization of high-performance MoS2 transistors with small contact resistances caused by lattice mismatching.

Original languageEnglish (US)
Article number14
JournalNPG Asia Materials
Volume11
Issue number1
DOIs
StatePublished - Dec 1 2019

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Carrier transport
Contact resistance
Phonon
Electron transitions
Temperature measurement
Electronic properties
Band structure
Transport properties
Transistors
Energy gap
Contact Resistance
Dependent
Temperature Measurement
Band Structure
Electronic Properties
Transport Properties
High Performance
Electronics
Distinct
contact resistance

Cite this

Yoon, H. S., Oh, J., Park, J. Y., Kang, J. S., Kwon, J., Cusati, T., ... Jun, S. C. (2019). Phonon-assisted carrier transport through a lattice-mismatched interface. NPG Asia Materials, 11(1), [14]. https://doi.org/10.1038/s41427-019-0113-2

Phonon-assisted carrier transport through a lattice-mismatched interface. / Yoon, Hyong Seo; Oh, Juyeong; Park, Jae Young; Kang, Jeong Seob; Kwon, Junyoung; Cusati, Teresa; Fiori, Gianluca; Iannaccone, Giuseppe; Fortunelli, Alessandro; Ozcelik, V. Ongun; Lee, Gwan Hyoung; Low, Tony; Jun, Seong Chan.

In: NPG Asia Materials, Vol. 11, No. 1, 14, 01.12.2019.

Research output: Contribution to journalArticle

Yoon, HS, Oh, J, Park, JY, Kang, JS, Kwon, J, Cusati, T, Fiori, G, Iannaccone, G, Fortunelli, A, Ozcelik, VO, Lee, GH, Low, T & Jun, SC 2019, 'Phonon-assisted carrier transport through a lattice-mismatched interface', NPG Asia Materials, vol. 11, no. 1, 14. https://doi.org/10.1038/s41427-019-0113-2
Yoon, Hyong Seo ; Oh, Juyeong ; Park, Jae Young ; Kang, Jeong Seob ; Kwon, Junyoung ; Cusati, Teresa ; Fiori, Gianluca ; Iannaccone, Giuseppe ; Fortunelli, Alessandro ; Ozcelik, V. Ongun ; Lee, Gwan Hyoung ; Low, Tony ; Jun, Seong Chan. / Phonon-assisted carrier transport through a lattice-mismatched interface. In: NPG Asia Materials. 2019 ; Vol. 11, No. 1.
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