Phase-shift lithography for sub-wavelength patterns of varying aspect ratios

Angeline Klemm, Andrew Lyle, Todd Klein, Jonathan Harms, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


A technique for creating phase shift photolithography masks for use with a stepper or mask aligner, as well as how to achieve sub-150 nm features of different aspect ratios is described. The mask utilizes two different regions, one transparent region of only the mask material, and another transparent region of SiO2, which are overlapped to create the pattern. Patterning was done by use of a Canon Stepper. By adjusting the angle between the two mask regions, the aspect ratio, which is defined as the length:width, of features was controlled. Features below 100 nm were patterned, and aspect ratios were controllably tuned between 1.1 and 2.6. The feature size was also shown to be able to be reduced by 25-30 nm with the use of reactive ion etching.

Original languageEnglish (US)
Pages (from-to)57-61
Number of pages5
JournalMicroelectronic Engineering
StatePublished - Nov 25 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.


  • Mask fabrication
  • Nanoscale patterning
  • Phase-shift lithography


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