Persistent photoconductivity in doping-modulated amorphous semiconductors

J. Kakalios, H. Fritzsche

Research output: Contribution to journalArticlepeer-review

142 Scopus citations

Abstract

We have synthesized amorphous-semiconductor superlattices consisting of alternating layers of n-type and p-type doped, hydrogenated, amorphous silicon. These new amorphous semiconductor structures exhibit a long-lived (τ∼days) excess conductivity after a brief light exposure at room temperature. This effect may be attributed to spatial separation of the photocarriers by the pn junction fields or, alternatively, to defect centers having a barrier against retrapping of photoexcited carriers.

Original languageEnglish (US)
Pages (from-to)1602-1605
Number of pages4
JournalPhysical Review Letters
Volume53
Issue number16
DOIs
StatePublished - Jan 1 1984

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