Perpendicular magnetic tunnel junctions with multi-interface free layer

Pravin Khanal; Bowei Zhou; Magda Andrade; Yanliu Dang; Albert Davydov; Ali Habiboglu; Jonah Saidian; Adam Laurie; Jian Ping Wang; Daniel B. Gopman; Weigang Wang

doi:10.1063/5.0066782

Perpendicular magnetic tunnel junctions with multi-interface free layer

Pravin Khanal, Bowei Zhou, Magda Andrade, Yanliu Dang, Albert Davydov, Ali Habiboglu, Jonah Saidian, Adam Laurie, Jian Ping Wang, Daniel B. Gopman, Weigang Wang

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy, and small cell size below 10 nm. Here, we study perpendicular magnetic tunnel junctions with composite free layers, where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, and Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of the tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, a large tunneling magnetoresistance above 200% has been achieved after 400 °C annealing.

Original language	English (US)
Article number	242404
Journal	Applied Physics Letters
Volume	119
Issue number	24
DOIs	https://doi.org/10.1063/5.0066782
State	Published - Dec 13 2021

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© 2021 Author(s).

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abstract = "Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy, and small cell size below 10 nm. Here, we study perpendicular magnetic tunnel junctions with composite free layers, where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, and Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of the tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, a large tunneling magnetoresistance above 200% has been achieved after 400 °C annealing.",

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AU - Khanal, Pravin

AU - Zhou, Bowei

AU - Andrade, Magda

AU - Dang, Yanliu

AU - Davydov, Albert

AU - Habiboglu, Ali

AU - Saidian, Jonah

AU - Laurie, Adam

AU - Wang, Jian Ping

AU - Gopman, Daniel B.

AU - Wang, Weigang

PY - 2021/12/13

Y1 - 2021/12/13

N2 - Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy, and small cell size below 10 nm. Here, we study perpendicular magnetic tunnel junctions with composite free layers, where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, and Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of the tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, a large tunneling magnetoresistance above 200% has been achieved after 400 °C annealing.

AB - Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy, and small cell size below 10 nm. Here, we study perpendicular magnetic tunnel junctions with composite free layers, where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, and Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of the tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, a large tunneling magnetoresistance above 200% has been achieved after 400 °C annealing.

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Perpendicular magnetic tunnel junctions with multi-interface free layer

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