Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers

J. Y. Chen, Naganivetha Thiyagarajah, H. J. Xu, J. M D Coey

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Abstract

CoFe/IrMn bilayers with perpendicular magnetization for various IrMn layer thicknesses exhibit unusual two-step hysteresis loops with both positive and negative loop shifts. Observed at room temperature in the as-grown state, they provide direct evidence of large antiferromagnetic domain formation at the IrMn interface. The exchange bias field reaches 100 mT with an IrMn layer thickness of 4 nm after field annealing at 200 °C-300 °C in 800 mT, which is at least three times as large as the coercivity, and may be useful for reference layers of spin-valves or magnetic tunnel junctions with perpendicular magnetic anisotropy.

Original languageEnglish (US)
Article number152405
JournalApplied Physics Letters
Volume104
Issue number15
DOIs
StatePublished - Jan 1 2014

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    Chen, J. Y., Thiyagarajah, N., Xu, H. J., & Coey, J. M. D. (2014). Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers. Applied Physics Letters, 104(15), [152405]. https://doi.org/10.1063/1.4871711