Performance of high permittivity TiO 2 dielectric MOSFETs

Stephen A Campbell, D. C. Gilmer, X. Wang, M. T. Hsieh, H. S. Kim, Wayne L Gladfelter, J. H. Yan

Research output: Contribution to conferencePaper

Abstract

The use of the lattice polarizable material TiO 2 as a possible SiO 2 replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6% of the film thickness.

Original languageEnglish (US)
Pages106-107
Number of pages2
StatePublished - Jan 1 1996
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

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Permittivity
Rutherford backscattering spectroscopy
Titanium dioxide
Spectrometry
Surface morphology
Film thickness
Atomic force microscopy
Energy gap
Pyrolysis
Titanium
Surface roughness
Annealing
Oxygen

Cite this

Campbell, S. A., Gilmer, D. C., Wang, X., Hsieh, M. T., Kim, H. S., Gladfelter, W. L., & Yan, J. H. (1996). Performance of high permittivity TiO 2 dielectric MOSFETs . 106-107. Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .

Performance of high permittivity TiO 2 dielectric MOSFETs . / Campbell, Stephen A; Gilmer, D. C.; Wang, X.; Hsieh, M. T.; Kim, H. S.; Gladfelter, Wayne L; Yan, J. H.

1996. 106-107 Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .

Research output: Contribution to conferencePaper

Campbell, SA, Gilmer, DC, Wang, X, Hsieh, MT, Kim, HS, Gladfelter, WL & Yan, JH 1996, ' Performance of high permittivity TiO 2 dielectric MOSFETs ' Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, 6/24/96 - 6/26/96, pp. 106-107.
Campbell SA, Gilmer DC, Wang X, Hsieh MT, Kim HS, Gladfelter WL et al. Performance of high permittivity TiO 2 dielectric MOSFETs . 1996. Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .
Campbell, Stephen A ; Gilmer, D. C. ; Wang, X. ; Hsieh, M. T. ; Kim, H. S. ; Gladfelter, Wayne L ; Yan, J. H. / Performance of high permittivity TiO 2 dielectric MOSFETs Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .2 p.
@conference{3c9e5ce79d2041afaa361a22ebb56123,
title = "Performance of high permittivity TiO 2 dielectric MOSFETs",
abstract = "The use of the lattice polarizable material TiO 2 as a possible SiO 2 replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6{\%} of the film thickness.",
author = "Campbell, {Stephen A} and Gilmer, {D. C.} and X. Wang and Hsieh, {M. T.} and Kim, {H. S.} and Gladfelter, {Wayne L} and Yan, {J. H.}",
year = "1996",
month = "1",
day = "1",
language = "English (US)",
pages = "106--107",
note = "Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC ; Conference date: 24-06-1996 Through 26-06-1996",

}

TY - CONF

T1 - Performance of high permittivity TiO 2 dielectric MOSFETs

AU - Campbell, Stephen A

AU - Gilmer, D. C.

AU - Wang, X.

AU - Hsieh, M. T.

AU - Kim, H. S.

AU - Gladfelter, Wayne L

AU - Yan, J. H.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - The use of the lattice polarizable material TiO 2 as a possible SiO 2 replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6% of the film thickness.

AB - The use of the lattice polarizable material TiO 2 as a possible SiO 2 replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6% of the film thickness.

UR - http://www.scopus.com/inward/record.url?scp=0029703213&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029703213&partnerID=8YFLogxK

M3 - Paper

SP - 106

EP - 107

ER -