Abstract
The use of the lattice polarizable material TiO2 as a possible SiO2 replacement for smaller devices was studied. Layers of polycrystalline anatase, which has a bandgap of approximately 3.2 eV, were deposited through the thermal decomposition of titanium tetrakis-isopropoxide. Rutherford backscattering spectrometry showed a [Ti]/[O] stoichiometric ratio of 1:2, within the sensitivity of the analysis. Atomic force microscopy indicated that the surface morphology was a sensitive function of deposition and post deposition annealing conditions. Optimum films, which were annealed in oxygen at 750°C after deposition, had average roughnesses of about 6% of the film thickness.
Original language | English (US) |
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Pages | 106-107 |
Number of pages | 2 |
State | Published - 1996 |
Event | Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA Duration: Jun 24 1996 → Jun 26 1996 |
Other
Other | Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC |
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City | Santa Barbara, CA, USA |
Period | 6/24/96 → 6/26/96 |