Performance and stability of aerosol-jet-printed electrolyte-gated transistors based on poly(3-hexylthiophene)

Se Hyun Kim; Kihyon Hong; Keun Hyung Lee; C. Daniel Frisbie

doi:10.1021/am401200y

Performance and stability of aerosol-jet-printed electrolyte-gated transistors based on poly(3-hexylthiophene)

Se Hyun Kim, Kihyon Hong, Keun Hyung Lee, C. Daniel Frisbie

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

118 Scopus citations

Abstract

We report performance optimization and stability analysis of aerosol-jet-printed electrolyte-gated transistors (EGTs) based on the polymer semiconductor poly(3-hexylthiophene) (P3HT). EGTs were optimized with respect to printed P3HT thickness and the completed device annealing temperature. EGTs with relatively thin P3HT films (∼50 nm) annealed at 120 C have the best performance and display an unusual combination of metrics including sub-1-V operation, ON/OFF current ratios of 10⁶, OFF currents of <10 ^-10 A (<10^-6 A cm^-2), saturation hole mobilities of 1.3 cm² V^-1 s^-1, threshold voltages of-0.3 V, and subthreshold swings of 70 mV decade^-1. Furthermore, optimized EGTs printed on polyester substrates are extremely robust to bias stress and repeated mechanical bending strain. Collectively, the results suggest that optimized P3HT-based EGTs are promising devices for printed, flexible electronics.

Original language	English (US)
Pages (from-to)	6580-6585
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	14
DOIs	https://doi.org/10.1021/am401200y
State	Published - Jul 24 2013

Keywords

aerosol jet printing
device stability
electrochemical transistor
electrolyte gating
ion gel
poly(3-hexylthiophene)

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10.1021/am401200y

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title = "Performance and stability of aerosol-jet-printed electrolyte-gated transistors based on poly(3-hexylthiophene)",

abstract = "We report performance optimization and stability analysis of aerosol-jet-printed electrolyte-gated transistors (EGTs) based on the polymer semiconductor poly(3-hexylthiophene) (P3HT). EGTs were optimized with respect to printed P3HT thickness and the completed device annealing temperature. EGTs with relatively thin P3HT films (∼50 nm) annealed at 120 C have the best performance and display an unusual combination of metrics including sub-1-V operation, ON/OFF current ratios of 106, OFF currents of <10 -10 A (<10-6 A cm-2), saturation hole mobilities of 1.3 cm2 V-1 s-1, threshold voltages of-0.3 V, and subthreshold swings of 70 mV decade-1. Furthermore, optimized EGTs printed on polyester substrates are extremely robust to bias stress and repeated mechanical bending strain. Collectively, the results suggest that optimized P3HT-based EGTs are promising devices for printed, flexible electronics.",

keywords = "aerosol jet printing, device stability, electrochemical transistor, electrolyte gating, ion gel, poly(3-hexylthiophene)",

author = "Kim, {Se Hyun} and Kihyon Hong and Lee, {Keun Hyung} and Frisbie, {C. Daniel}",

year = "2013",

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journal = "ACS Applied Materials and Interfaces",

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AU - Kim, Se Hyun

AU - Hong, Kihyon

AU - Lee, Keun Hyung

AU - Frisbie, C. Daniel

PY - 2013/7/24

Y1 - 2013/7/24

N2 - We report performance optimization and stability analysis of aerosol-jet-printed electrolyte-gated transistors (EGTs) based on the polymer semiconductor poly(3-hexylthiophene) (P3HT). EGTs were optimized with respect to printed P3HT thickness and the completed device annealing temperature. EGTs with relatively thin P3HT films (∼50 nm) annealed at 120 C have the best performance and display an unusual combination of metrics including sub-1-V operation, ON/OFF current ratios of 106, OFF currents of <10 -10 A (<10-6 A cm-2), saturation hole mobilities of 1.3 cm2 V-1 s-1, threshold voltages of-0.3 V, and subthreshold swings of 70 mV decade-1. Furthermore, optimized EGTs printed on polyester substrates are extremely robust to bias stress and repeated mechanical bending strain. Collectively, the results suggest that optimized P3HT-based EGTs are promising devices for printed, flexible electronics.

AB - We report performance optimization and stability analysis of aerosol-jet-printed electrolyte-gated transistors (EGTs) based on the polymer semiconductor poly(3-hexylthiophene) (P3HT). EGTs were optimized with respect to printed P3HT thickness and the completed device annealing temperature. EGTs with relatively thin P3HT films (∼50 nm) annealed at 120 C have the best performance and display an unusual combination of metrics including sub-1-V operation, ON/OFF current ratios of 106, OFF currents of <10 -10 A (<10-6 A cm-2), saturation hole mobilities of 1.3 cm2 V-1 s-1, threshold voltages of-0.3 V, and subthreshold swings of 70 mV decade-1. Furthermore, optimized EGTs printed on polyester substrates are extremely robust to bias stress and repeated mechanical bending strain. Collectively, the results suggest that optimized P3HT-based EGTs are promising devices for printed, flexible electronics.

KW - aerosol jet printing

KW - device stability

KW - electrochemical transistor

KW - electrolyte gating

KW - ion gel

KW - poly(3-hexylthiophene)

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Performance and stability of aerosol-jet-printed electrolyte-gated transistors based on poly(3-hexylthiophene)

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