Performance and reliability of asymmetric LDD devices and logic gates

Jone F. Chen, Jiang Tao, Peng Fang, Chenming Hu

Research output: Contribution to journalConference article

Abstract

The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

Original languageEnglish (US)
Pages (from-to)533-536
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
StatePublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1998 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA
Duration: May 11 1998May 14 1998

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Hot carriers
Logic gates
Carrier lifetime

Cite this

Performance and reliability of asymmetric LDD devices and logic gates. / Chen, Jone F.; Tao, Jiang; Fang, Peng; Hu, Chenming.

In: Proceedings of the Custom Integrated Circuits Conference, 01.01.1998, p. 533-536.

Research output: Contribution to journalConference article

@article{bc6d61a3d8244709ba1ddc3fb9666f3a,
title = "Performance and reliability of asymmetric LDD devices and logic gates",
abstract = "The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5{\%} (10{\%} if PMOSFET also had asymmetric LDD) higher speed and 10{\%} lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.",
author = "Chen, {Jone F.} and Jiang Tao and Peng Fang and Chenming Hu",
year = "1998",
month = "1",
day = "1",
language = "English (US)",
pages = "533--536",
journal = "Proceedings of the Custom Integrated Circuits Conference",
issn = "0886-5930",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Performance and reliability of asymmetric LDD devices and logic gates

AU - Chen, Jone F.

AU - Tao, Jiang

AU - Fang, Peng

AU - Hu, Chenming

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

AB - The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

UR - http://www.scopus.com/inward/record.url?scp=0031618199&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031618199&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031618199

SP - 533

EP - 536

JO - Proceedings of the Custom Integrated Circuits Conference

JF - Proceedings of the Custom Integrated Circuits Conference

SN - 0886-5930

ER -