Performance analysis of III-V materials in a double-gate nano-MOSFET

Kurtis D. Cantley, Yang Liu, Himadri S. Pal, Tony Low, Shaikh S. Ahmed, Mark S. Lundstrom

Research output: Contribution to journalConference article

31 Citations (Scopus)

Abstract

Nanoscale double-gate n-MOSFETs with silicon and III-V (GaAs and InAs) channels are studied using numerical simulation. The device structures are based on the ITRS 14nm node (year 2020), and are simulated using the program nanoMOS, which utilizes the NEGF technique for treating ballistic electron transport in the channel. The effective masses used are obtained by extraction from the full band structure using the sp3d5s* empirical tight-binding method. This process returns effective mass values for all valleys which are far more accurate than bulk values for the ultra-thin-body MOSFET. The results indicate that for digital logic applications, III-V materials offer little or no performance advantage over silicon for ballistic devices near the channel length scaling limit.

Original languageEnglish (US)
Article number4418877
Pages (from-to)113-116
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - Dec 1 2007
Event2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
Duration: Dec 10 2007Dec 12 2007

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Silicon
Ballistics
field effect transistors
ballistics
thin bodies
Band structure
silicon
logic
valleys
Computer simulation
scaling
electrons
simulation
Electron Transport
gallium arsenide
indium arsenide

Cite this

Performance analysis of III-V materials in a double-gate nano-MOSFET. / Cantley, Kurtis D.; Liu, Yang; Pal, Himadri S.; Low, Tony; Ahmed, Shaikh S.; Lundstrom, Mark S.

In: Technical Digest - International Electron Devices Meeting, IEDM, 01.12.2007, p. 113-116.

Research output: Contribution to journalConference article

Cantley, Kurtis D. ; Liu, Yang ; Pal, Himadri S. ; Low, Tony ; Ahmed, Shaikh S. ; Lundstrom, Mark S. / Performance analysis of III-V materials in a double-gate nano-MOSFET. In: Technical Digest - International Electron Devices Meeting, IEDM. 2007 ; pp. 113-116.
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