Abstract
The Monte Carlo method is used to determine the distribution of the potential energy of an electron at the bottom of the conduction band of a lightly doped compensated semiconductor kept at low temperature. The percolation level is calculated for different degrees of compensation in the range 0. 1 less than equivalent to K less than equivalent to 0. 95. A calculation is made of the activation energy correction //69 //1 associated with doping and compensation. A comparison is made with the experimental results.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1025-1029 |
| Number of pages | 5 |
| Journal | Soviet physics. Semiconductors |
| Volume | 13 |
| Issue number | 9 |
| State | Published - 1979 |