The Monte Carlo method is used to determine the distribution of the potential energy of an electron at the bottom of the conduction band of a lightly doped compensated semiconductor kept at low temperature. The percolation level is calculated for different degrees of compensation in the range 0. 1 less than equivalent to K less than equivalent to 0. 95. A calculation is made of the activation energy correction //69 //1 associated with doping and compensation. A comparison is made with the experimental results.
|Original language||English (US)|
|Number of pages||5|
|Journal||Soviet physics. Semiconductors|
|State||Published - Jan 1 1979|