Patterning anodic porous alumina with resist developers for patterned nanowire formation

Seungyeon Lee, Daniel Wratkowski, Jeong Hyun Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Formation of patterned metal and semiconductor (e.g. silicon) nanowires is achieved using anodic aluminum oxide (AAO) templates with porous structures of different heights resulting from an initial step difference made by etching the aluminum (Al) thin film with a photoresist developer prior to the anodization process. This approach allows for the growth of vertically aligned nanowire arrays on a metal substrate, instead of an oriented semiconductor substrate, using an electroplating or a chemical vapor deposition (CVD) process The vertically aligned metal and semiconductor nanowires defined on a metal substrate could be applied to the realization of vertical 3D transistors, field emission devices, or nano-micro sensors for biological applications.

Original languageEnglish (US)
Title of host publicationSemiconductor Nanowires and Devices for Advanced Applications
EditorsJordi Arbiol, Michael A. Filler, Qihua Xiong, Anna Fontcuberta i Morral, Kimberly Dick Thelander
PublisherMaterials Research Society
Number of pages6
ISBN (Electronic)9781510826397
StatePublished - Jan 1 2015
Event2015 MRS Spring Meeting - San Francisco, United States
Duration: Apr 6 2015Apr 10 2015

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2015 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco


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