Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Michael J. Maher; Kazunori Mori; Stephen M. Sirard; Andrew M. Dinhobl; Christopher M. Bates; Emir Gurer; Gregory Blachut; Austin P. Lane; William J. Durand; Matthew C. Carlson; Jeffrey R. Strahan; Christopher J. Ellison; C. Grant Willson

doi:10.1021/acsmacrolett.6b00005

Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Michael J. Maher
, Kazunori Mori
, Stephen M. Sirard
, Andrew M. Dinhobl
, Christopher M. Bates
, Emir Gurer
, Gregory Blachut
, Austin P. Lane
, William J. Durand
, Matthew C. Carlson
, Jeffrey R. Strahan
, Christopher J. Ellison
, C. Grant Willson

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO₂ via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

Original language	English (US)
Pages (from-to)	391-395
Number of pages	5
Journal	ACS Macro Letters
Volume	5
Issue number	3
DOIs	https://doi.org/10.1021/acsmacrolett.6b00005
State	Published - Mar 15 2016

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© 2016 American Chemical Society.

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10.1021/acsmacrolett.6b00005

https://authors.library.caltech.edu/66221/2/mz6b00005_si_001.pdf

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title = "Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers",

abstract = "Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).",

author = "Maher, \{Michael J.\} and Kazunori Mori and Sirard, \{Stephen M.\} and Dinhobl, \{Andrew M.\} and Bates, \{Christopher M.\} and Emir Gurer and Gregory Blachut and Lane, \{Austin P.\} and Durand, \{William J.\} and Carlson, \{Matthew C.\} and Strahan, \{Jeffrey R.\} and Ellison, \{Christopher J.\} and Willson, \{C. Grant\}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = mar,

day = "15",

doi = "10.1021/acsmacrolett.6b00005",

language = "English (US)",

volume = "5",

pages = "391--395",

journal = "ACS Macro Letters",

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TY - JOUR

T1 - Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

AU - Maher, Michael J.

AU - Mori, Kazunori

AU - Sirard, Stephen M.

AU - Dinhobl, Andrew M.

AU - Bates, Christopher M.

AU - Gurer, Emir

AU - Blachut, Gregory

AU - Lane, Austin P.

AU - Durand, William J.

AU - Carlson, Matthew C.

AU - Strahan, Jeffrey R.

AU - Ellison, Christopher J.

AU - Willson, C. Grant

PY - 2016/3/15

Y1 - 2016/3/15

N2 - Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

AB - Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

UR - https://www.scopus.com/pages/publications/84961775007

UR - https://www.scopus.com/pages/publications/84961775007#tab=citedBy

U2 - 10.1021/acsmacrolett.6b00005

DO - 10.1021/acsmacrolett.6b00005

M3 - Article

AN - SCOPUS:84961775007

SN - 2161-1653

VL - 5

SP - 391

EP - 395

JO - ACS Macro Letters

JF - ACS Macro Letters

IS - 3

ER -

Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Abstract

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