Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Michael J. Maher, Kazunori Mori, Stephen M. Sirard, Andrew M. Dinhobl, Christopher M. Bates, Emir Gurer, Gregory Blachut, Austin P. Lane, William J. Durand, Matthew C. Carlson, Jeffrey R. Strahan, Christopher J. Ellison, C. Grant Willson

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Abstract

Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

Original languageEnglish (US)
Pages (from-to)391-395
Number of pages5
JournalACS Macro Letters
Volume5
Issue number3
DOIs
StatePublished - Mar 15 2016

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    Maher, M. J., Mori, K., Sirard, S. M., Dinhobl, A. M., Bates, C. M., Gurer, E., Blachut, G., Lane, A. P., Durand, W. J., Carlson, M. C., Strahan, J. R., Ellison, C. J., & Willson, C. G. (2016). Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers. ACS Macro Letters, 5(3), 391-395. https://doi.org/10.1021/acsmacrolett.6b00005