Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Michael J. Maher; Kazunori Mori; Stephen M. Sirard; Andrew M. Dinhobl; Christopher M. Bates; Emir Gurer; Gregory Blachut; Austin P. Lane; William J. Durand; Matthew C. Carlson; Jeffrey R. Strahan; Christopher J. Ellison; C. Grant Willson

doi:10.1021/acsmacrolett.6b00005

Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

Michael J. Maher, Kazunori Mori, Stephen M. Sirard, Andrew M. Dinhobl, Christopher M. Bates, Emir Gurer, Gregory Blachut, Austin P. Lane, William J. Durand, Matthew C. Carlson, Jeffrey R. Strahan, Christopher J. Ellison, C. Grant Willson

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO₂ via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

Original language	English (US)
Pages (from-to)	391-395
Number of pages	5
Journal	ACS Macro Letters
Volume	5
Issue number	3
DOIs	https://doi.org/10.1021/acsmacrolett.6b00005
State	Published - Mar 15 2016

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© 2016 American Chemical Society.

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https://authors.library.caltech.edu/66221/2/mz6b00005_si_001.pdf

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@article{d64549db8f1843ae94c67da1370e96a2,

title = "Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers",

abstract = "Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).",

author = "Maher, {Michael J.} and Kazunori Mori and Sirard, {Stephen M.} and Dinhobl, {Andrew M.} and Bates, {Christopher M.} and Emir Gurer and Gregory Blachut and Lane, {Austin P.} and Durand, {William J.} and Carlson, {Matthew C.} and Strahan, {Jeffrey R.} and Ellison, {Christopher J.} and Willson, {C. Grant}",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = mar,

day = "15",

doi = "10.1021/acsmacrolett.6b00005",

language = "English (US)",

volume = "5",

pages = "391--395",

journal = "ACS Macro Letters",

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T1 - Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

AU - Maher, Michael J.

AU - Mori, Kazunori

AU - Sirard, Stephen M.

AU - Dinhobl, Andrew M.

AU - Bates, Christopher M.

AU - Gurer, Emir

AU - Blachut, Gregory

AU - Lane, Austin P.

AU - Durand, William J.

AU - Carlson, Matthew C.

AU - Strahan, Jeffrey R.

AU - Ellison, Christopher J.

AU - Willson, C. Grant

PY - 2016/3/15

Y1 - 2016/3/15

N2 - Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

AB - Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries. (Figure Presented).

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DO - 10.1021/acsmacrolett.6b00005

M3 - Article

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SP - 391

EP - 395

JO - ACS Macro Letters

JF - ACS Macro Letters

IS - 3

ER -

Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

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