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Passivation of GaAs FET’s with PECVD Silicon Nitride Films of Different Stress States
Edward Y. Chang
, Gregory T. Cibuzar
, Krishna P. Pande
Research output
:
Contribution to journal
›
Article
›
peer-review
58
Scopus citations
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Keyphrases
Stress State
100%
Passivation
100%
Silicon Nitride Film
100%
GaAs FET
100%
MESFET
100%
PECVD Nitride
100%
Nitrides
80%
Breakdown Voltage
40%
Tensile Stress
40%
Nitride Passivation
40%
Charge Density
20%
Gallium Arsenide
20%
Threshold Voltage
20%
Compressive Stress
20%
Double-channel
20%
GaAs MESFET
20%
Elastic Stress
20%
Surface Oxide
20%
Hydrogen Incorporation
20%
Piezoelectric Charges
20%
Material Science
Gallium Arsenide
100%
Field Effect Transistors
100%
Nitride Compound
100%
Silicon Nitride
100%
Ultimate Tensile Strength
33%
Piezoelectricity
16%
Density
16%
Film
16%
Oxide Surface
16%