Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness

Sandeep Nijhawan, Peter H. McMurry, Stephen A. Campbell

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

The particle transport in parallel-plate chemical vapor deposition (CVD) reactors was discussed. Measurements showing particle transport in the reactor were presented and studied using a Eulerian continuum particle transport formulation. The results showed that particles formed in the parallel-plate region were confined in a thin sheath between the hot wafer and cold showerhead inlet.

Original languageEnglish (US)
Pages (from-to)2198-2206
Number of pages9
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number5
DOIs
StatePublished - Sep 1 2000
Event47th International Symposium: Vacuum, Thin Films, Surfaces/Interfaces, and Processing - Boston, USA
Duration: Oct 2 2000Oct 6 2000

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