Abstract
The particle formation during low-pressure chemical vapor deposition from silane and oxygen was measured, modeled and film properties were investigated. Measurement of particle concentrations and size redistribution were compared with the prediction of a numerical model for particle formation and growth. The impact of particle formation on SiO2 film properties was also investigated. Results showed that the dielectric constant of the films was higher when the films were deposited in a particle-rich domain.
Original language | English (US) |
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Pages (from-to) | 413-423 |
Number of pages | 11 |
Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
Volume | 20 |
Issue number | 2 |
DOIs | |
State | Published - Mar 2002 |