Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties

T. Kim; S. M. Suh; S. L. Girshick; M. R. Zachariah; P. H. McMurry; R. M. Rassel; Z. Shen; S. A. Campbell

doi:10.1116/1.1448506

Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties

T. Kim, S. M. Suh, S. L. Girshick, M. R. Zachariah, P. H. McMurry, R. M. Rassel, Z. Shen, S. A. Campbell

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Abstract

The particle formation during low-pressure chemical vapor deposition from silane and oxygen was measured, modeled and film properties were investigated. Measurement of particle concentrations and size redistribution were compared with the prediction of a numerical model for particle formation and growth. The impact of particle formation on SiO₂ film properties was also investigated. Results showed that the dielectric constant of the films was higher when the films were deposited in a particle-rich domain.

Original language	English (US)
Pages (from-to)	413-423
Number of pages	11
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	2
DOIs	https://doi.org/10.1116/1.1448506
State	Published - Mar 2002

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Kim, T., Suh, S. M., Girshick, S. L., Zachariah, M. R., McMurry, P. H., Rassel, R. M., Shen, Z., & Campbell, S. A. (2002). Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties. Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, 20(2), 413-423. https://doi.org/10.1116/1.1448506

Kim, T, Suh, SM, Girshick, SL, Zachariah, MR, McMurry, PH, Rassel, RM, Shen, Z & Campbell, SA 2002, 'Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties', Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, vol. 20, no. 2, pp. 413-423. https://doi.org/10.1116/1.1448506

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abstract = "The particle formation during low-pressure chemical vapor deposition from silane and oxygen was measured, modeled and film properties were investigated. Measurement of particle concentrations and size redistribution were compared with the prediction of a numerical model for particle formation and growth. The impact of particle formation on SiO2 film properties was also investigated. Results showed that the dielectric constant of the films was higher when the films were deposited in a particle-rich domain.",

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AU - Rassel, R. M.

AU - Shen, Z.

AU - Campbell, S. A.

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Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties

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