Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties

T. Kim; S. M. Suh; S. L. Girshick; M. R. Zachariah; P. H. McMurry; R. M. Rassel; Z. Shen; S. A. Campbell

doi:10.1116/1.1448506

Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties

T. Kim, S. M. Suh, S. L. Girshick, M. R. Zachariah, P. H. McMurry, R. M. Rassel, Z. Shen, S. A. Campbell

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The particle formation during low-pressure chemical vapor deposition from silane and oxygen was measured, modeled and film properties were investigated. Measurement of particle concentrations and size redistribution were compared with the prediction of a numerical model for particle formation and growth. The impact of particle formation on SiO₂ film properties was also investigated. Results showed that the dielectric constant of the films was higher when the films were deposited in a particle-rich domain.

Original language	English (US)
Pages (from-to)	413-423
Number of pages	11
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	20
Issue number	2
DOIs	https://doi.org/10.1116/1.1448506
State	Published - Mar 2002

Publisher link

10.1116/1.1448506

Find It

Find It at U of M Libraries

Cite this

Kim, T., Suh, S. M., Girshick, S. L., Zachariah, M. R., McMurry, P. H., Rassel, R. M., Shen, Z., & Campbell, S. A. (2002). Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties. Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, 20(2), 413-423. https://doi.org/10.1116/1.1448506

Kim, T, Suh, SM, Girshick, SL, Zachariah, MR, McMurry, PH, Rassel, RM, Shen, Z & Campbell, SA 2002, 'Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties', Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, vol. 20, no. 2, pp. 413-423. https://doi.org/10.1116/1.1448506

@article{4733a1e965734070845573be3228f4b9,

title = "Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties",

abstract = "The particle formation during low-pressure chemical vapor deposition from silane and oxygen was measured, modeled and film properties were investigated. Measurement of particle concentrations and size redistribution were compared with the prediction of a numerical model for particle formation and growth. The impact of particle formation on SiO2 film properties was also investigated. Results showed that the dielectric constant of the films was higher when the films were deposited in a particle-rich domain.",

author = "T. Kim and Suh, {S. M.} and Girshick, {S. L.} and Zachariah, {M. R.} and McMurry, {P. H.} and Rassel, {R. M.} and Z. Shen and Campbell, {S. A.}",

year = "2002",

month = mar,

doi = "10.1116/1.1448506",

language = "English (US)",

volume = "20",

pages = "413--423",

journal = "Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Particle formation during low-pressure chemical vapor deposition from silane and oxygen

T2 - Measurement, modeling, and film properties

AU - Kim, T.

AU - Suh, S. M.

AU - Girshick, S. L.

AU - Zachariah, M. R.

AU - McMurry, P. H.

AU - Rassel, R. M.

AU - Shen, Z.

AU - Campbell, S. A.

PY - 2002/3

Y1 - 2002/3

N2 - The particle formation during low-pressure chemical vapor deposition from silane and oxygen was measured, modeled and film properties were investigated. Measurement of particle concentrations and size redistribution were compared with the prediction of a numerical model for particle formation and growth. The impact of particle formation on SiO2 film properties was also investigated. Results showed that the dielectric constant of the films was higher when the films were deposited in a particle-rich domain.

AB - The particle formation during low-pressure chemical vapor deposition from silane and oxygen was measured, modeled and film properties were investigated. Measurement of particle concentrations and size redistribution were compared with the prediction of a numerical model for particle formation and growth. The impact of particle formation on SiO2 film properties was also investigated. Results showed that the dielectric constant of the films was higher when the films were deposited in a particle-rich domain.

UR - http://www.scopus.com/inward/record.url?scp=0036495191&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036495191&partnerID=8YFLogxK

U2 - 10.1116/1.1448506

DO - 10.1116/1.1448506

M3 - Article

AN - SCOPUS:0036495191

SN - 0734-2101

VL - 20

SP - 413

EP - 423

JO - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

IS - 2

ER -

Particle formation during low-pressure chemical vapor deposition from silane and oxygen: Measurement, modeling, and film properties

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this