Particle engulfment dynamics under oscillating crystal growth conditions

Yutao Tao, Tina Sorgenfrei, Thomas Jauß, Arne Cröll, Christian Reimann, Jochen Friedrich, Jeffrey J. Derby

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

To better understand the physical mechanisms behind particle engulfment dynamics under fluctuating solidification velocities, transient simulations are performed for a SiC particle in a silicon solidification system with oscillating growth rates using a rigorous finite-element model developed previously. Simulations reveal complicated behaviors that require a re-examination of the classical notion of a steady-state, critical growth velocity, vc, for particle engulfment. Under sinusoidal growth variations at a frequency representative of turbulent fluctuations in a large-scale melt, stable pushing states featuring nonlinear particle-growth front oscillations can arise, even when the maximum growth velocity slightly exceeds vc. However, higher-amplitude growth oscillations at the same frequency are shown to result in particle engulfment. Significantly, engulfment under such dynamic conditions can occur at average solidification rates far below the steady-state critical velocity, a behavior consistent with many experimental observations.

Original languageEnglish (US)
Pages (from-to)24-27
Number of pages4
JournalJournal of Crystal Growth
Volume468
DOIs
StatePublished - Jun 15 2017

Keywords

  • A1. Computer simulation
  • A1. Fluid flows
  • A1. Heat transfer
  • A2. Particle engulfment
  • B2. Multicrystalline silicon
  • B3. Solar cells

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