Parasitic Capacitance Effect on Dynamic Performance of Aerosol-Jet-Printed Sub 2 v Poly(3-hexylthiophene) Electrolyte-Gated Transistors

Fazel Zare Bidoky, C. Daniel Frisbie

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Printed, low-voltage poly(3-hexylthiophene) (P3HT) electrolyte-gated transistors (EGTs) have favorable quasi-static characteristics, including sub 2 V operation, carrier mobility (μ) of 1 cm2/(V s), ON/OFF current ratio of 106, and static leakage current density of 10-6 A/cm2. Here we study the dynamic performance of P3HT EGTs in which the semiconductor, dielectric, and gate electrode were deposited using aerosol-jet printing; the source and drain electrodes were patterned by conventional microlithography. With a source-to-drain separation of 2.5 μm, the highest theoretical achievable switching frequency is ∼10 MHz, assuming the movement of charge through the semiconductor is the limiting step. However, the measured maximum switching frequency of P3HT EGTs to date is ∼1 kHz, implying that another process is slowing the response. By systematically varying the device geometry, we show that the frequency is limited by the capacitance between the gate and drain (i.e., parasitic capacitance). The traditional scaling of switching time with the square of channel length (L) does not hold for P3HT EGTs. Rather, minimizing the size of the drain electrode increases the maximum switching speed. We achieve 10 kHz for P3HT EGTs with source/drain electrode dimensions of 2.5 μm × 50 μm and channel dimensions of 2.5 μm × 50 μm. Further improvements will require additional shrinkage of electrode dimensions as well as consideration of other factors such as ion gel thickness and carrier mobility.

Original languageEnglish (US)
Pages (from-to)27012-27017
Number of pages6
JournalACS Applied Materials and Interfaces
Volume8
Issue number40
DOIs
StatePublished - Oct 12 2016

Keywords

  • aerosol-jet printing
  • cut-off frequency
  • dynamic performance
  • electrolyte-gated transistors
  • ion gel
  • parasitic capacitance
  • poly(3-hexylthiophene)

Fingerprint Dive into the research topics of 'Parasitic Capacitance Effect on Dynamic Performance of Aerosol-Jet-Printed Sub 2 v Poly(3-hexylthiophene) Electrolyte-Gated Transistors'. Together they form a unique fingerprint.

  • Cite this