Parameter Extraction Technique for HBT Equivalent Circuit Using Cutoff Mode Measurement

Seonghearn Lee, Anand Gopinath

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

We propose a new parameter extraction method based on the S-parameter measurements of the HBTs biased to cutoff. This method is applied to confirm the results for the RF probe pad and interconnection pattern parasitics obtained from the special test structures, and to determine some of the device capacitances of the HBT. The remaining device parameters are extracted by the S-parameter measurements of the devices biased to the active mode. The extraction technique gives good agreement between the equivalent circuit and the measured S-parameters of the HBT including probe pads and inter-connections.

Original languageEnglish (US)
Pages (from-to)574-577
Number of pages4
JournalIEEE Transactions on Microwave Theory and Techniques
Volume40
Issue number3
DOIs
StatePublished - Mar 1992

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