We propose a new parameter extraction method based on the S-parameter measurements of the HBTs biased to cutoff. This method is applied to confirm the results for the RF probe pad and interconnection pattern parasitics obtained from the special test structures, and to determine some of the device capacitances of the HBT. The remaining device parameters are extracted by the S-parameter measurements of the devices biased to the active mode. The extraction technique gives good agreement between the equivalent circuit and the measured S-parameters of the HBT including probe pads and inter-connections.
|Original language||English (US)|
|Number of pages||4|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|State||Published - Mar 1992|