Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

Seonghearn Lee; Anand Gopinath; Steven J. Pachuta

Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

Seonghearn Lee
, Anand Gopinath
, Steven J. Pachuta

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Determination of the experimental value of minority electron mobility μ_n^p in p-type GaAs doped to 3.0 × 10¹⁹ cm^-3 at 300 K is discussed. The value was obtained by extracting the base transit time using the plot of total emitter-collector transit time vs. 1/I_e and parameter extraction of extrinsic parasitics. The experimental value of 2240 cm²/V-s is in good agreement with theoretical predictions which show the increase of μ_n^p with increasing doping concentrations at doping range larger than 10¹⁹ cm^-3. Using this parameter extraction technique, the reduction of the base transit time was observed in the Al_xGa_1-xAs/GaAs composition graded base HBT.

Original language	English (US)
Title of host publication	Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit
Publisher	Publ by IEEE
Pages	287-294
Number of pages	8
ISBN (Print)	0780304918
State	Published - Jan 1 1992
Event	IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA Duration: Aug 5 1991 → Aug 7 1991

Publication series

Name	Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit

Other

Other	IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
City	Ithaca, NY, USA
Period	8/5/91 → 8/7/91

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Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs. / Lee, Seonghearn; Gopinath, Anand; Pachuta, Steven J.
Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit. Publ by IEEE, 1992. p. 287-294 (Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, S, Gopinath, A & Pachuta, SJ 1992, Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs. in Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit. Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit, Publ by IEEE, pp. 287-294, IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, 8/5/91.

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title = "Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs",

abstract = "Determination of the experimental value of minority electron mobility μnp in p-type GaAs doped to 3.0 × 1019 cm-3 at 300 K is discussed. The value was obtained by extracting the base transit time using the plot of total emitter-collector transit time vs. 1/Ie and parameter extraction of extrinsic parasitics. The experimental value of 2240 cm2/V-s is in good agreement with theoretical predictions which show the increase of μnp with increasing doping concentrations at doping range larger than 1019 cm-3. Using this parameter extraction technique, the reduction of the base transit time was observed in the AlxGa1-xAs/GaAs composition graded base HBT.",

author = "Seonghearn Lee and Anand Gopinath and Pachuta, \{Steven J.\}",

year = "1992",

month = jan,

day = "1",

language = "English (US)",

isbn = "0780304918",

series = "Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit",

publisher = "Publ by IEEE",

pages = "287--294",

booktitle = "Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit",

note = "IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ; Conference date: 05-08-1991 Through 07-08-1991",

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TY - GEN

T1 - Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

AU - Lee, Seonghearn

AU - Gopinath, Anand

AU - Pachuta, Steven J.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Determination of the experimental value of minority electron mobility μnp in p-type GaAs doped to 3.0 × 1019 cm-3 at 300 K is discussed. The value was obtained by extracting the base transit time using the plot of total emitter-collector transit time vs. 1/Ie and parameter extraction of extrinsic parasitics. The experimental value of 2240 cm2/V-s is in good agreement with theoretical predictions which show the increase of μnp with increasing doping concentrations at doping range larger than 1019 cm-3. Using this parameter extraction technique, the reduction of the base transit time was observed in the AlxGa1-xAs/GaAs composition graded base HBT.

AB - Determination of the experimental value of minority electron mobility μnp in p-type GaAs doped to 3.0 × 1019 cm-3 at 300 K is discussed. The value was obtained by extracting the base transit time using the plot of total emitter-collector transit time vs. 1/Ie and parameter extraction of extrinsic parasitics. The experimental value of 2240 cm2/V-s is in good agreement with theoretical predictions which show the increase of μnp with increasing doping concentrations at doping range larger than 1019 cm-3. Using this parameter extraction technique, the reduction of the base transit time was observed in the AlxGa1-xAs/GaAs composition graded base HBT.

UR - https://www.scopus.com/pages/publications/0026627689

UR - https://www.scopus.com/pages/publications/0026627689#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:0026627689

SN - 0780304918

T3 - Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit

SP - 287

EP - 294

BT - Proc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit

PB - Publ by IEEE

T2 - IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Y2 - 5 August 1991 through 7 August 1991

ER -

Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

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