Parameter extraction technique for accurate measurement of minority electron mobility in N-p-n AlGaAs/GaAs HBTs

Seonghearn Lee, Anand Gopinath, Steven J. Pachuta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Determination of the experimental value of minority electron mobility μnp in p-type GaAs doped to 3.0 × 1019 cm-3 at 300 K is discussed. The value was obtained by extracting the base transit time using the plot of total emitter-collector transit time vs. 1/Ie and parameter extraction of extrinsic parasitics. The experimental value of 2240 cm2/V-s is in good agreement with theoretical predictions which show the increase of μnp with increasing doping concentrations at doping range larger than 1019 cm-3. Using this parameter extraction technique, the reduction of the base transit time was observed in the AlxGa1-xAs/GaAs composition graded base HBT.

Original languageEnglish (US)
Title of host publicationProc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit
PublisherPubl by IEEE
Pages287-294
Number of pages8
ISBN (Print)0780304918
StatePublished - Jan 1 1992
EventIEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: Aug 5 1991Aug 7 1991

Publication series

NameProc IEEE Cornell Conf Adv Concepts High Speed Semicond Device Circuit

Other

OtherIEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period8/5/918/7/91

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