Paralleling Devices in a 13.56 MHz Class Φ2Inverter to Achieve Current Splitting and Improve Device Thermal Performance

Keerti Palanisamy, Kamlesh Sawant, Jungwon Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a comparison between the operation of a 13.56 MHz Class Φ2 inverter using one or multiple gallium nitride (GaN) switching devices in parallel. In high-frequency, high-power applications such as plasma generation, the GaN device is advantageous due to its low switching losses and on-resistance, evident in simulations. However, as the frequency and power increase, the power dissipation in the devices increases. Using device parallelization for current splitting, we can reduce the losses, which leads to lower device heating, thereby reducing device stress and enhancing the overall thermal management. This paper shows that current splitting effectively reduces the temperature rise across an individual switching device. Using the optimal number of paralleled devices, the steady-state case temperature of each device is almost halved in a multi-device inverter compared to a single-device inverter.

Original languageEnglish (US)
Title of host publication2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages152-157
Number of pages6
ISBN (Electronic)9781665401814
DOIs
StatePublished - 2021
Event8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Virtual, Online, United States
Duration: Nov 7 2021Nov 11 2021

Publication series

Name2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021 - Proceedings

Conference

Conference8th Annual IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021
Country/TerritoryUnited States
CityVirtual, Online
Period11/7/2111/11/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

Keywords

  • Class Φ2 inverter
  • Gallium nitride device
  • High frequency
  • Parallel
  • Resonant inverter

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