Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ∼5 × 10-8 mbar). Films grown for temperature range of 200-500 °C showed p-type conduction with hole concentration of 1.374 × 1016 to 5.538 × 1016 cm-3, resistivity of 66.733-12.758 ω cm, and carrier mobility of 4.964-8.846 cm2 V-1 s-1 at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I-V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of SbZn-2VZn complex caused acceptor-like behavior in SZO films.
Bibliographical noteFunding Information:
This work was partially supported by Department of Science and Technology (DST) Fast Track Scheme for Young Scientist No. SR/FTP/ETA-101/2010. This work was also supported by DST Science and Engineering Research Board (SERB) project number SR/S3/EECE/0142/2011 and Council of Scientific and Industrial Research (CSIR) project number 22(0608)/12/EMR-II. We are also grateful to the Atomic Force Microscopy (AFM) Facility equipped at Sophisticated Instrument Centre (SIC), IIT Indore.