Ozone ALD of doped ZnO as a transparent metal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The rapidly escalating cost of indium tin oxide has led to search for lower cost transparent conductor options such as heavily doped zinc oxide. Here we study the donors aluminum (AZO) and gallium (GZO), as well as phosphorus (PZO) which is n-type as-deposited, but converts to p-type with a suitable anneal. We present the results of atomic layer deposition (ALD) of AZO, GZO, and PZO with ozone as the oxidant. The metal-containing precursors were diethyl zinc, trimethyl aluminum, triethylgallium and trimethylphosphite. Homogeneous and layered structures are compared. Homogeneous films with about 2% aluminum or gallium were found to have the lowest resistivity (∼0.5 milliohm-cm). For PZO, the lowest resistivity was found to occur for films with 3.2%P when annealed at 750°C (0.46 ohm-cm).

Original languageEnglish (US)
Title of host publicationDielectrics for Nanosystems 5
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Pages389-400
Number of pages12
Volume45
Edition3
DOIs
StatePublished - Nov 19 2012
Event5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States
Duration: May 6 2012May 10 2012

Other

Other5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period5/6/125/10/12

Fingerprint

Atomic layer deposition
Ozone
Gallium
Aluminum
Metals
Zinc oxide
Tin oxides
Oxidants
Indium
Phosphorus
Costs
Zinc

Cite this

Yuan, H., Luo, B., Gladfelter, W. L., & Campbell, S. A. (2012). Ozone ALD of doped ZnO as a transparent metal. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., Vol. 45, pp. 389-400) https://doi.org/10.1149/1.3700904

Ozone ALD of doped ZnO as a transparent metal. / Yuan, Hai; Luo, Bing; Gladfelter, Wayne L.; Campbell, Stephen A.

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. Vol. 45 3. ed. 2012. p. 389-400.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yuan, H, Luo, B, Gladfelter, WL & Campbell, SA 2012, Ozone ALD of doped ZnO as a transparent metal. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, vol. 45, pp. 389-400, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 5/6/12. https://doi.org/10.1149/1.3700904
Yuan H, Luo B, Gladfelter WL, Campbell SA. Ozone ALD of doped ZnO as a transparent metal. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Vol. 45. 2012. p. 389-400 https://doi.org/10.1149/1.3700904
Yuan, Hai ; Luo, Bing ; Gladfelter, Wayne L. ; Campbell, Stephen A. / Ozone ALD of doped ZnO as a transparent metal. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. Vol. 45 3. ed. 2012. pp. 389-400
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